Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance
Investigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, blanket Barrie...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0137126 |
| _version_ | 1811154842110918656 |
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| author | A. M. Arquitola H. Jung S. Lee T. J. Ronningen S. Krishna |
| author_facet | A. M. Arquitola H. Jung S. Lee T. J. Ronningen S. Krishna |
| author_sort | A. M. Arquitola |
| collection | DOAJ |
| description | Investigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, blanket Barrier-Etched, and SU-8 Passivated blanket barrier-etched. A qualitative comparison of these three samples shows that the minority carrier lifetime decreases for the Barrier-Etched sample compared to the As-Grown sample, indicating that the minority carrier lifetime is sensitive to changes in the sample surface, specifically the introduction of surface states. We compare these samples quantitatively using a polynomial fit (A−1 + Bn + Cn2). We find for the As-Grown sample A = 1.22 ± 0.45 µs, B = 2.5 ± 0.2 × 10−12 cm3/s, and C = 5.004 ± 4.996 × 10−31 cm6/s, for the Barrier-Etched sample A = 1.17 ± 0.40 µs, B = 9.9 ± 0.2 × 10−12 cm3/s, and C = 9.502 ± 9.498 × 10−30 cm6/s, and for the Passivated sample A = 1.34 ± 0.45 µs, B = 5.3 ± 0.5 × 10−12 cm3/s, and C = 5.500 ± 4.500 × 10−33 cm6/s. |
| first_indexed | 2024-04-10T04:24:01Z |
| format | Article |
| id | doaj.art-8b4e7166a1b44cfbbd415d457da139c2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-10T04:24:01Z |
| publishDate | 2023-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8b4e7166a1b44cfbbd415d457da139c22023-03-10T17:26:21ZengAIP Publishing LLCAIP Advances2158-32262023-02-01132025326025326-510.1063/5.0137126Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectanceA. M. Arquitola0H. Jung1S. Lee2T. J. Ronningen3S. Krishna4Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USAInvestigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, blanket Barrier-Etched, and SU-8 Passivated blanket barrier-etched. A qualitative comparison of these three samples shows that the minority carrier lifetime decreases for the Barrier-Etched sample compared to the As-Grown sample, indicating that the minority carrier lifetime is sensitive to changes in the sample surface, specifically the introduction of surface states. We compare these samples quantitatively using a polynomial fit (A−1 + Bn + Cn2). We find for the As-Grown sample A = 1.22 ± 0.45 µs, B = 2.5 ± 0.2 × 10−12 cm3/s, and C = 5.004 ± 4.996 × 10−31 cm6/s, for the Barrier-Etched sample A = 1.17 ± 0.40 µs, B = 9.9 ± 0.2 × 10−12 cm3/s, and C = 9.502 ± 9.498 × 10−30 cm6/s, and for the Passivated sample A = 1.34 ± 0.45 µs, B = 5.3 ± 0.5 × 10−12 cm3/s, and C = 5.500 ± 4.500 × 10−33 cm6/s.http://dx.doi.org/10.1063/5.0137126 |
| spellingShingle | A. M. Arquitola H. Jung S. Lee T. J. Ronningen S. Krishna Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance AIP Advances |
| title | Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance |
| title_full | Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance |
| title_fullStr | Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance |
| title_full_unstemmed | Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance |
| title_short | Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance |
| title_sort | assessment of surface recombination in mid wave infrared inassb nbn detectors using transient microwave reflectance |
| url | http://dx.doi.org/10.1063/5.0137126 |
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