Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance
Investigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, blanket Barrie...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-02-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0137126 |