Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance

Investigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nBn structures under three conditions: As-Grown, blanket Barrie...

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Bibliographic Details
Main Authors: A. M. Arquitola, H. Jung, S. Lee, T. J. Ronningen, S. Krishna
Format: Article
Language:English
Published: AIP Publishing LLC 2023-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0137126