Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices

Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices

Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog weight updates remains a challenge. Standard filamentary and area‐dependent resistive switching exhibit characteristic differences in the...

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Bibliographic Details
Main Authors: Stephan Aussen, Felix Cüppers, Carsten Funck, Janghyun Jo, Stephan Werner, Christoph Pratsch, Stephan Menzel, Regina Dittmann, Rafal Dunin‐Borkowski, Rainer Waser, Susanne Hoffmann‐Eifert
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Electronic Materials
Subjects:
analog
digital
electron energy loss spectroscopy
electronic conduction mechanism
memristors
ReRAM
Online Access:https://doi.org/10.1002/aelm.202300520

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