Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi

Half-Heusler compounds have attracted significant attention because of their topologically non-trivial electronic structure, which leads to unusual electron transport properties. We thoroughly investigated the magnetotransport properties of high-quality single crystals of two half-Heusler phases, Tb...

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Bibliographic Details
Main Authors: O. Pavlosiuk, P. Fałat, D. Kaczorowski, P. Wiśniewski
Format: Article
Language:English
Published: AIP Publishing LLC 2020-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0026956
Description
Summary:Half-Heusler compounds have attracted significant attention because of their topologically non-trivial electronic structure, which leads to unusual electron transport properties. We thoroughly investigated the magnetotransport properties of high-quality single crystals of two half-Heusler phases, TbPtBi and HoPtBi, in pursuit of the characteristic features of topologically non-trivial electronic states. Both studied compounds are characterized by the giant values of transverse magnetoresistance with no sign of saturation in a magnetic field up to 14 T. HoPtBi demonstrates the Shubnikov–de Haas effect with two principal frequencies, indicating a complex Fermi surface; the extracted values of carrier effective masses are rather small, 0.18 me and 0.27 me. The investigated compounds exhibit negative longitudinal magnetoresistance and anomalous Hall effect, which likely arise from a nonzero Berry curvature. Both compounds show strongly anisotropic magnetoresistance that in HoPtBi exhibits a butterfly-like behavior.
ISSN:2166-532X