Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures

Abstract The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe2 with external lig...

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Main Authors: Sewon Park, Jaehoon Ji, Connor Cunningham, Srajan Pillai, Jean Rouillon, Carlos Benitez-Martin, Mengqi Fang, Eui-Hyeok Yang, Joakim Andréasson, Jeong Ho You, Jong Hyun Choi
Format: Article
Language:English
Published: Nature Portfolio 2024-03-01
Series:Scientific Reports
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Online Access:https://doi.org/10.1038/s41598-024-57479-z
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author Sewon Park
Jaehoon Ji
Connor Cunningham
Srajan Pillai
Jean Rouillon
Carlos Benitez-Martin
Mengqi Fang
Eui-Hyeok Yang
Joakim Andréasson
Jeong Ho You
Jong Hyun Choi
author_facet Sewon Park
Jaehoon Ji
Connor Cunningham
Srajan Pillai
Jean Rouillon
Carlos Benitez-Martin
Mengqi Fang
Eui-Hyeok Yang
Joakim Andréasson
Jeong Ho You
Jong Hyun Choi
author_sort Sewon Park
collection DOAJ
description Abstract The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe2 with external light. Photochromic diarylethene (DAE) molecules formed a 2-nm-thick uniform layer on MoSe2, switching between its closed- and open-form isomers under UV and visible irradiation, respectively. We have discovered that the closed DAE conformation under UV has its lowest unoccupied molecular orbital energy level lower than the conduction band minimum of MoSe2, which facilitates photoinduced charge separation at the hybrid interface and quenches photoluminescence (PL) from monolayer flakes. In contrast, open isomers under visible light prevent photoexcited electron transfer from MoSe2 to DAE, thus retaining PL emission properties. Alternating UV and visible light repeatedly show a dynamic modulation of optoelectronic signatures of MoSe2. Conductive atomic force microscopy and Kelvin probe force microscopy also reveal an increase in conductivity and work function of MoSe2/DAE with photoswitched closed-form DAE. These results may open new opportunities for designing new phototransistors and other 2D optoelectronic devices.
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spelling doaj.art-8b7142524c504b0484478726361d589e2024-03-31T11:18:49ZengNature PortfolioScientific Reports2045-23222024-03-011411810.1038/s41598-024-57479-zPhotoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structuresSewon Park0Jaehoon Ji1Connor Cunningham2Srajan Pillai3Jean Rouillon4Carlos Benitez-Martin5Mengqi Fang6Eui-Hyeok Yang7Joakim Andréasson8Jeong Ho You9Jong Hyun Choi10School of Mechanical Engineering, Purdue UniversitySchool of Mechanical Engineering, Purdue UniversityDepartment of Mechanical Engineering, University of St. ThomasDepartment of Mechanical Engineering, University of St. ThomasDepartment of Chemistry and Chemical Engineering, Chalmers University of TechnologyDepartment of Chemistry and Molecular Biology, University of GothenburgDepartment of Mechanical Engineering, Stevens Institute of TechnologyDepartment of Mechanical Engineering, Stevens Institute of TechnologyDepartment of Chemistry and Chemical Engineering, Chalmers University of TechnologyDepartment of Mechanical Engineering, University of St. ThomasSchool of Mechanical Engineering, Purdue UniversityAbstract The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe2 with external light. Photochromic diarylethene (DAE) molecules formed a 2-nm-thick uniform layer on MoSe2, switching between its closed- and open-form isomers under UV and visible irradiation, respectively. We have discovered that the closed DAE conformation under UV has its lowest unoccupied molecular orbital energy level lower than the conduction band minimum of MoSe2, which facilitates photoinduced charge separation at the hybrid interface and quenches photoluminescence (PL) from monolayer flakes. In contrast, open isomers under visible light prevent photoexcited electron transfer from MoSe2 to DAE, thus retaining PL emission properties. Alternating UV and visible light repeatedly show a dynamic modulation of optoelectronic signatures of MoSe2. Conductive atomic force microscopy and Kelvin probe force microscopy also reveal an increase in conductivity and work function of MoSe2/DAE with photoswitched closed-form DAE. These results may open new opportunities for designing new phototransistors and other 2D optoelectronic devices.https://doi.org/10.1038/s41598-024-57479-zTransition metal dichalcogenideMoSe2OptoelectronicsPhotoswitchPhotochromic moleculesDiarylethene
spellingShingle Sewon Park
Jaehoon Ji
Connor Cunningham
Srajan Pillai
Jean Rouillon
Carlos Benitez-Martin
Mengqi Fang
Eui-Hyeok Yang
Joakim Andréasson
Jeong Ho You
Jong Hyun Choi
Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
Scientific Reports
Transition metal dichalcogenide
MoSe2
Optoelectronics
Photoswitch
Photochromic molecules
Diarylethene
title Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
title_full Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
title_fullStr Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
title_full_unstemmed Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
title_short Photoswitchable optoelectronic properties of 2D MoSe2/diarylethene hybrid structures
title_sort photoswitchable optoelectronic properties of 2d mose2 diarylethene hybrid structures
topic Transition metal dichalcogenide
MoSe2
Optoelectronics
Photoswitch
Photochromic molecules
Diarylethene
url https://doi.org/10.1038/s41598-024-57479-z
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