High sensitive NH3 sensor based on electrochemically etched porous silicon

In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples’ porosity was determin...

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Bibliographic Details
Main Authors: B.A. Khaniyev, Y. Sagidolda, K.K. Dikhanbayev, A.O. Tileu, M.K. Ibraimov
Format: Article
Language:English
Published: Taylor & Francis Group 2020-01-01
Series:Cogent Engineering
Subjects:
Online Access:http://dx.doi.org/10.1080/23311916.2020.1810880
Description
Summary:In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples’ porosity was determined by the gravimetric method and amounted to 59.5%, 72.7%, 83.3%, respectively. Optical characteristics such as Raman spectra and photoluminescence (PL) spectra were obtained. The current-voltage and capacitance-voltage characteristics were also measured to calculate the sensitivity of the samples. The study results show that sample, which is etched for 40 minutes has a maximum response value to ammonia (NH3) gas than others, and the sensitivity is 33.25. The results demonstrated that it is possible to develop a high sensitive sensor device based on por-Si for determining NH3 gas in concentrations below 0.1 ppm at room temperature.
ISSN:2331-1916