High sensitive NH3 sensor based on electrochemically etched porous silicon

In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples’ porosity was determin...

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Main Authors: B.A. Khaniyev, Y. Sagidolda, K.K. Dikhanbayev, A.O. Tileu, M.K. Ibraimov
Format: Article
Language:English
Published: Taylor & Francis Group 2020-01-01
Series:Cogent Engineering
Subjects:
Online Access:http://dx.doi.org/10.1080/23311916.2020.1810880
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author B.A. Khaniyev
Y. Sagidolda
K.K. Dikhanbayev
A.O. Tileu
M.K. Ibraimov
author_facet B.A. Khaniyev
Y. Sagidolda
K.K. Dikhanbayev
A.O. Tileu
M.K. Ibraimov
author_sort B.A. Khaniyev
collection DOAJ
description In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples’ porosity was determined by the gravimetric method and amounted to 59.5%, 72.7%, 83.3%, respectively. Optical characteristics such as Raman spectra and photoluminescence (PL) spectra were obtained. The current-voltage and capacitance-voltage characteristics were also measured to calculate the sensitivity of the samples. The study results show that sample, which is etched for 40 minutes has a maximum response value to ammonia (NH3) gas than others, and the sensitivity is 33.25. The results demonstrated that it is possible to develop a high sensitive sensor device based on por-Si for determining NH3 gas in concentrations below 0.1 ppm at room temperature.
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spelling doaj.art-8b75a536a1734619953c9778661765c22023-09-03T04:21:10ZengTaylor & Francis GroupCogent Engineering2331-19162020-01-017110.1080/23311916.2020.18108801810880High sensitive NH3 sensor based on electrochemically etched porous siliconB.A. Khaniyev0Y. Sagidolda1K.K. Dikhanbayev2A.O. Tileu3M.K. Ibraimov4Al-Farabi Kazakh UniversityAl-Farabi Kazakh UniversityAl-Farabi Kazakh UniversityAl-Farabi Kazakh UniversityAl-Farabi Kazakh UniversityIn the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples’ porosity was determined by the gravimetric method and amounted to 59.5%, 72.7%, 83.3%, respectively. Optical characteristics such as Raman spectra and photoluminescence (PL) spectra were obtained. The current-voltage and capacitance-voltage characteristics were also measured to calculate the sensitivity of the samples. The study results show that sample, which is etched for 40 minutes has a maximum response value to ammonia (NH3) gas than others, and the sensitivity is 33.25. The results demonstrated that it is possible to develop a high sensitive sensor device based on por-Si for determining NH3 gas in concentrations below 0.1 ppm at room temperature.http://dx.doi.org/10.1080/23311916.2020.1810880porous siliconammonia sensoroptical characteristicselectrical characteristics
spellingShingle B.A. Khaniyev
Y. Sagidolda
K.K. Dikhanbayev
A.O. Tileu
M.K. Ibraimov
High sensitive NH3 sensor based on electrochemically etched porous silicon
Cogent Engineering
porous silicon
ammonia sensor
optical characteristics
electrical characteristics
title High sensitive NH3 sensor based on electrochemically etched porous silicon
title_full High sensitive NH3 sensor based on electrochemically etched porous silicon
title_fullStr High sensitive NH3 sensor based on electrochemically etched porous silicon
title_full_unstemmed High sensitive NH3 sensor based on electrochemically etched porous silicon
title_short High sensitive NH3 sensor based on electrochemically etched porous silicon
title_sort high sensitive nh3 sensor based on electrochemically etched porous silicon
topic porous silicon
ammonia sensor
optical characteristics
electrical characteristics
url http://dx.doi.org/10.1080/23311916.2020.1810880
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