Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells
Ultra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm t...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2019-01-01
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| Series: | Frontiers in Chemistry |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/article/10.3389/fchem.2018.00600/full |