A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors
In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold regio...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4945410 |
| _version_ | 1811274781750722560 |
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| author | Chi-Le Chen Wei-Feng Chen Lei Zhou Wei-Jing Wu Miao Xu Lei Wang Jun-Biao Peng |
| author_facet | Chi-Le Chen Wei-Feng Chen Lei Zhou Wei-Jing Wu Miao Xu Lei Wang Jun-Biao Peng |
| author_sort | Chi-Le Chen |
| collection | DOAJ |
| description | In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs. |
| first_indexed | 2024-04-12T23:26:14Z |
| format | Article |
| id | doaj.art-8b793dfa32ce4148b6a2cd4dbaea43b1 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T23:26:14Z |
| publishDate | 2016-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8b793dfa32ce4148b6a2cd4dbaea43b12022-12-22T03:12:25ZengAIP Publishing LLCAIP Advances2158-32262016-03-0163035025035025-810.1063/1.4945410096603ADVA physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistorsChi-Le Chen0Wei-Feng Chen1Lei Zhou2Wei-Jing Wu3Miao Xu4Lei Wang5Jun-Biao Peng6State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaNew Vision Opto-Electronic Technology Co., Ltd., Guangzhou 510530, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaIn the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.http://dx.doi.org/10.1063/1.4945410 |
| spellingShingle | Chi-Le Chen Wei-Feng Chen Lei Zhou Wei-Jing Wu Miao Xu Lei Wang Jun-Biao Peng A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors AIP Advances |
| title | A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors |
| title_full | A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors |
| title_fullStr | A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors |
| title_full_unstemmed | A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors |
| title_short | A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors |
| title_sort | physics based model of threshold voltage for amorphous oxide semiconductor thin film transistors |
| url | http://dx.doi.org/10.1063/1.4945410 |
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