Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enh...

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Bibliographic Details
Main Authors: Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Composite channel FETs
cryogenic electronics
high electron mobility transistors (HEMTs)
low noise amplifiers (LNAs)
millimetre wave applications
ultrathin barrier
Online Access:https://ieeexplore.ieee.org/document/10328869/

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