Quantum dynamics of charge state in silicon field evaporation

The charge state of an ion field-evaporating from a silicon-atom cluster is analyzed using time-dependent density functional theory coupled to molecular dynamics. The final charge state of the ion is shown to increase gradually with increasing external electrostatic field in agreement with the avera...

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Main Authors: Elena P. Silaeva, Kazuki Uchida, Kazuyuki Watanabe
Format: Article
Language:English
Published: AIP Publishing LLC 2016-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4960553
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author Elena P. Silaeva
Kazuki Uchida
Kazuyuki Watanabe
author_facet Elena P. Silaeva
Kazuki Uchida
Kazuyuki Watanabe
author_sort Elena P. Silaeva
collection DOAJ
description The charge state of an ion field-evaporating from a silicon-atom cluster is analyzed using time-dependent density functional theory coupled to molecular dynamics. The final charge state of the ion is shown to increase gradually with increasing external electrostatic field in agreement with the average charge state of silicon ions detected experimentally. When field evaporation is triggered by laser-induced electronic excitations the charge state also increases with increasing intensity of the laser pulse. At the evaporation threshold, the charge state of the evaporating ion does not depend on the electrostatic field due to the strong contribution of laser excitations to the ionization process both at low and high laser energies. A neutral silicon atom escaping the cluster due to its high initial kinetic energy is shown to be eventually ionized by external electrostatic field.
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spelling doaj.art-8b965f6f9a374f6b86c79090a702d5072022-12-22T03:15:54ZengAIP Publishing LLCAIP Advances2158-32262016-08-0168085202085202-1010.1063/1.4960553007608ADVQuantum dynamics of charge state in silicon field evaporationElena P. Silaeva0Kazuki Uchida1Kazuyuki Watanabe2Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, JapanDepartment of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, JapanDepartment of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, JapanThe charge state of an ion field-evaporating from a silicon-atom cluster is analyzed using time-dependent density functional theory coupled to molecular dynamics. The final charge state of the ion is shown to increase gradually with increasing external electrostatic field in agreement with the average charge state of silicon ions detected experimentally. When field evaporation is triggered by laser-induced electronic excitations the charge state also increases with increasing intensity of the laser pulse. At the evaporation threshold, the charge state of the evaporating ion does not depend on the electrostatic field due to the strong contribution of laser excitations to the ionization process both at low and high laser energies. A neutral silicon atom escaping the cluster due to its high initial kinetic energy is shown to be eventually ionized by external electrostatic field.http://dx.doi.org/10.1063/1.4960553
spellingShingle Elena P. Silaeva
Kazuki Uchida
Kazuyuki Watanabe
Quantum dynamics of charge state in silicon field evaporation
AIP Advances
title Quantum dynamics of charge state in silicon field evaporation
title_full Quantum dynamics of charge state in silicon field evaporation
title_fullStr Quantum dynamics of charge state in silicon field evaporation
title_full_unstemmed Quantum dynamics of charge state in silicon field evaporation
title_short Quantum dynamics of charge state in silicon field evaporation
title_sort quantum dynamics of charge state in silicon field evaporation
url http://dx.doi.org/10.1063/1.4960553
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AT kazukiuchida quantumdynamicsofchargestateinsiliconfieldevaporation
AT kazuyukiwatanabe quantumdynamicsofchargestateinsiliconfieldevaporation