Bespoke pulse design for robust rapid two-qubit gates with trapped ions

Two-qubit gate performance is vital for scaling up ion-trap quantum computing. Optimized quantum control is needed to achieve reductions in gate duration and gate error rate. We describe two-qubit gates with addressed Raman beams within a linear trapped-ion chain by a quantum master equation (QME)....

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Bibliographic Details
Main Authors: Seyed Shakib Vedaie, Eduardo J. Páez, Nhung H. Nguyen, Norbert M. Linke, Barry C. Sanders
Format: Article
Language:English
Published: American Physical Society 2023-05-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.5.023098
Description
Summary:Two-qubit gate performance is vital for scaling up ion-trap quantum computing. Optimized quantum control is needed to achieve reductions in gate duration and gate error rate. We describe two-qubit gates with addressed Raman beams within a linear trapped-ion chain by a quantum master equation (QME). The QME incorporates the single-ion two-photon effective Rabi frequency, Autler-Townes and vibrational Bloch-Siegert energy shifts, off-resonant transitions, Raman and Rayleigh scattering, laser-power fluctuations, motional heating, cross-Kerr phonon coupling, laser spillover, asymmetric addressing beams, and an imperfect initial motional ground state, with no fitting parameters, whereas state-of-the-art methods are oblivious to these effects in the gate design procedure. We employ global optimization to design pulse sequences for achieving a robust rapid two-qubit gate for a simulated chain of seven trapped ^{171}Yb^{+} ions by optimizing over numerically integrated QME solutions. Here, robust means resilient against slow drift of motional frequencies, and rapid means gate execution where the effective Rabi frequency is comparable to the detuning of the laser from the ion's bare electronic transition. Our robust quantum control delivers rapid high-quality two-qubit gates in long ion chains, enabling scalable quantum computing with trapped ions.
ISSN:2643-1564