Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires
The ionic radius of V element ion, which is in the same group as Nb, is slightly smaller than that of W ion. Doping V element can improve the ion diffusion rate and structural stability of tungsten oxide nanowires. V-doped tungsten oxide nanowire films were prepared by magnetron sputtering and hydro...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
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Journal of Materials Engineering
2023-07-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2022.000770 |
| _version_ | 1797335390131060736 |
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| author | ZHANG Zuosheng ZHANG Yong DONG Senyu CHEN Chuansheng WANG Yong |
| author_facet | ZHANG Zuosheng ZHANG Yong DONG Senyu CHEN Chuansheng WANG Yong |
| author_sort | ZHANG Zuosheng |
| collection | DOAJ |
| description | The ionic radius of V element ion, which is in the same group as Nb, is slightly smaller than that of W ion. Doping V element can improve the ion diffusion rate and structural stability of tungsten oxide nanowires. V-doped tungsten oxide nanowire films were prepared by magnetron sputtering and hydrothermal methods. The effects of different V doping levels on the morphology, composition, and electrochromic properties of samples were investigated using field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and electrochemical measurement equipment. The results show that the optical properties of samples are improved by appropriate V doping. When the V doping level is 0.1% (atom fraction), the tungsten oxide film exhibits the best electrochromic performance. Factors such as interplanar spacing, strengthening of V—O bonds and oxygen vacancy concentration are key factors affecting the electrochromic performance of tungsten oxide films. This work will provide useful references for the study of V-doped tungsten oxide nanowire structures as electrochromic materials and devices. |
| first_indexed | 2024-03-08T08:37:25Z |
| format | Article |
| id | doaj.art-8bc296e579594b1ab3055559af6fbf14 |
| institution | Directory Open Access Journal |
| issn | 1001-4381 |
| language | zho |
| last_indexed | 2024-03-08T08:37:25Z |
| publishDate | 2023-07-01 |
| publisher | Journal of Materials Engineering |
| record_format | Article |
| series | Cailiao gongcheng |
| spelling | doaj.art-8bc296e579594b1ab3055559af6fbf142024-02-02T00:45:50ZzhoJournal of Materials EngineeringCailiao gongcheng1001-43812023-07-0151717818710.11868/j.issn.1001-4381.2022.00077020230718Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowiresZHANG Zuosheng0ZHANG Yong1DONG Senyu2CHEN Chuansheng3WANG Yong4Intelligent Manufacturing College, Anhui Vocational and Technical College, Hefei 230011, ChinaSchool of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, ChinaSchool of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, ChinaIntelligent Manufacturing College, Anhui Vocational and Technical College, Hefei 230011, ChinaIntelligent Manufacturing College, Anhui Vocational and Technical College, Hefei 230011, ChinaThe ionic radius of V element ion, which is in the same group as Nb, is slightly smaller than that of W ion. Doping V element can improve the ion diffusion rate and structural stability of tungsten oxide nanowires. V-doped tungsten oxide nanowire films were prepared by magnetron sputtering and hydrothermal methods. The effects of different V doping levels on the morphology, composition, and electrochromic properties of samples were investigated using field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and electrochemical measurement equipment. The results show that the optical properties of samples are improved by appropriate V doping. When the V doping level is 0.1% (atom fraction), the tungsten oxide film exhibits the best electrochromic performance. Factors such as interplanar spacing, strengthening of V—O bonds and oxygen vacancy concentration are key factors affecting the electrochromic performance of tungsten oxide films. This work will provide useful references for the study of V-doped tungsten oxide nanowire structures as electrochromic materials and devices.http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2022.000770v elementtungsten oxidenanowireelectrochromic |
| spellingShingle | ZHANG Zuosheng ZHANG Yong DONG Senyu CHEN Chuansheng WANG Yong Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires Cailiao gongcheng v element tungsten oxide nanowire electrochromic |
| title | Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires |
| title_full | Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires |
| title_fullStr | Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires |
| title_full_unstemmed | Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires |
| title_short | Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires |
| title_sort | preparation and electrochromic energy storage properties of vanadium doped tungsten oxide nanowires |
| topic | v element tungsten oxide nanowire electrochromic |
| url | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2022.000770 |
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