Preparation and characterization of PLD deposited Indium Selenide thin film
Indium Selenide films were deposited by pulsed laser deposition (PLD) with a Nd-YAG laser under vacuum condition. During the deposition, the substrates were kept at room temperature. The typical thicknesses of films were 200nm, 800 nm. The films were analyzed by X-ray diffraction for the crystallogr...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2014-01-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_102329_fc29eced4b1b921b6f200c6d9dc6700a.pdf |
| _version_ | 1797325727062818816 |
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| author | Khaled Z. Yahea Amar H. Jareeze Heba Salam Tariq |
| author_facet | Khaled Z. Yahea Amar H. Jareeze Heba Salam Tariq |
| author_sort | Khaled Z. Yahea |
| collection | DOAJ |
| description | Indium Selenide films were deposited by pulsed laser deposition (PLD) with a Nd-YAG laser under vacuum condition. During the deposition, the substrates were kept at room temperature. The typical thicknesses of films were 200nm, 800 nm. The films were analyzed by X-ray diffraction for the crystallographic, the surface morphology of the film were investigated by AFM. It has been observed that grain growth depend on film thickness. The optical properties were characterized in the ultraviolet–visible region employing optical transmission, absorption, band gap. The direct optical band gap value for the films was found to be of the order of (2.2, 2.1) eV for thickness (200,800) nm respectively at room temperature. |
| first_indexed | 2024-03-08T06:13:35Z |
| format | Article |
| id | doaj.art-8c0e17eb963a4a2e897bdaadf3d17ef3 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:13:35Z |
| publishDate | 2014-01-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-8c0e17eb963a4a2e897bdaadf3d17ef32024-02-04T17:30:01ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582014-01-01322B26427010.30684/etj.32.2B.9102329Preparation and characterization of PLD deposited Indium Selenide thin filmKhaled Z. YaheaAmar H. JareezeHeba Salam TariqIndium Selenide films were deposited by pulsed laser deposition (PLD) with a Nd-YAG laser under vacuum condition. During the deposition, the substrates were kept at room temperature. The typical thicknesses of films were 200nm, 800 nm. The films were analyzed by X-ray diffraction for the crystallographic, the surface morphology of the film were investigated by AFM. It has been observed that grain growth depend on film thickness. The optical properties were characterized in the ultraviolet–visible region employing optical transmission, absorption, band gap. The direct optical band gap value for the films was found to be of the order of (2.2, 2.1) eV for thickness (200,800) nm respectively at room temperature.https://etj.uotechnology.edu.iq/article_102329_fc29eced4b1b921b6f200c6d9dc6700a.pdfindium selenide pulsed laser depositionoptical propertiesband gap |
| spellingShingle | Khaled Z. Yahea Amar H. Jareeze Heba Salam Tariq Preparation and characterization of PLD deposited Indium Selenide thin film Engineering and Technology Journal indium selenide pulsed laser deposition optical properties band gap |
| title | Preparation and characterization of PLD deposited Indium Selenide thin film |
| title_full | Preparation and characterization of PLD deposited Indium Selenide thin film |
| title_fullStr | Preparation and characterization of PLD deposited Indium Selenide thin film |
| title_full_unstemmed | Preparation and characterization of PLD deposited Indium Selenide thin film |
| title_short | Preparation and characterization of PLD deposited Indium Selenide thin film |
| title_sort | preparation and characterization of pld deposited indium selenide thin film |
| topic | indium selenide pulsed laser deposition optical properties band gap |
| url | https://etj.uotechnology.edu.iq/article_102329_fc29eced4b1b921b6f200c6d9dc6700a.pdf |
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