Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation

Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation

The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work. A thermally stable Si _0.7 Ge _0.3 /Si multilayer with As ion implantation was attained when the rapid thermal annealing (RTA)...

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Bibliographic Details
Main Authors: Yanrong Wang, Yongliang Li, Xiaohong Cheng, Hanxiang Wang, Qide Yao, Jing Zhang, Wenkai Liu, Guilei Wang, Jiang Yan, Wenwu Wang
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
SiGe/Si multilayer
ion implantation
activation
RTA treatment
Ge diffusion
Online Access:https://doi.org/10.1088/2053-1591/ac08ce

Internet

https://doi.org/10.1088/2053-1591/ac08ce

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