High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source

Planar nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] has emerged as a unique field emission source attractive for accelerator applications because of its capability to generate a high charge beam and handle moderate vacuum conditions. Most importantly, (N)UNCD sources are simple to pr...

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Main Authors: Jiahang Shao, Mitchell Schneider, Gongxiaohui Chen, Tanvi Nikhar, Kiran Kumar Kovi, Linda Spentzouris, Eric Wisniewski, John Power, Manoel Conde, Wanming Liu, Sergey V. Baryshev
Format: Article
Language:English
Published: American Physical Society 2019-12-01
Series:Physical Review Accelerators and Beams
Online Access:http://doi.org/10.1103/PhysRevAccelBeams.22.123402
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author Jiahang Shao
Mitchell Schneider
Gongxiaohui Chen
Tanvi Nikhar
Kiran Kumar Kovi
Linda Spentzouris
Eric Wisniewski
John Power
Manoel Conde
Wanming Liu
Sergey V. Baryshev
author_facet Jiahang Shao
Mitchell Schneider
Gongxiaohui Chen
Tanvi Nikhar
Kiran Kumar Kovi
Linda Spentzouris
Eric Wisniewski
John Power
Manoel Conde
Wanming Liu
Sergey V. Baryshev
author_sort Jiahang Shao
collection DOAJ
description Planar nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] has emerged as a unique field emission source attractive for accelerator applications because of its capability to generate a high charge beam and handle moderate vacuum conditions. Most importantly, (N)UNCD sources are simple to produce: Conventional high aspect ratio isolated emitters are not required to be formed on the surface, and the actual emitter surface roughness is on the order of only 10–100 nm. A careful reliability assessment of (N)UNCD is required before it may find routine application in accelerator systems. In the present study using an L-band normal conducting single-cell rf gun, a (N)UNCD cathode has been conditioned to ∼42  MV/m in a well-controlled manner. It reached a maximum output charge of 15 nC corresponding to an average current of 6 mA during an emission period of 2.5  μs. Imaging of the emission current revealed a large number of isolated emitters (density over 100/cm^{2}) distributed on the cathode, which is consistent with previous tests in dc environments. The performance metrics, the emission imaging, and the systematic study of emission properties during rf conditioning in a wide gradient range assert (N)UNCD as an enabling electron source for rf injector designs serving industrial and scientific applications. These studies also improve the fundamental knowledge of the practical conditioning procedure via a better understanding of the emission mechanisms.
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spelling doaj.art-8c236f6d28fd4b679c61b223c53aace92022-12-22T00:47:38ZengAmerican Physical SocietyPhysical Review Accelerators and Beams2469-98882019-12-01221212340210.1103/PhysRevAccelBeams.22.123402High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron sourceJiahang ShaoMitchell SchneiderGongxiaohui ChenTanvi NikharKiran Kumar KoviLinda SpentzourisEric WisniewskiJohn PowerManoel CondeWanming LiuSergey V. BaryshevPlanar nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] has emerged as a unique field emission source attractive for accelerator applications because of its capability to generate a high charge beam and handle moderate vacuum conditions. Most importantly, (N)UNCD sources are simple to produce: Conventional high aspect ratio isolated emitters are not required to be formed on the surface, and the actual emitter surface roughness is on the order of only 10–100 nm. A careful reliability assessment of (N)UNCD is required before it may find routine application in accelerator systems. In the present study using an L-band normal conducting single-cell rf gun, a (N)UNCD cathode has been conditioned to ∼42  MV/m in a well-controlled manner. It reached a maximum output charge of 15 nC corresponding to an average current of 6 mA during an emission period of 2.5  μs. Imaging of the emission current revealed a large number of isolated emitters (density over 100/cm^{2}) distributed on the cathode, which is consistent with previous tests in dc environments. The performance metrics, the emission imaging, and the systematic study of emission properties during rf conditioning in a wide gradient range assert (N)UNCD as an enabling electron source for rf injector designs serving industrial and scientific applications. These studies also improve the fundamental knowledge of the practical conditioning procedure via a better understanding of the emission mechanisms.http://doi.org/10.1103/PhysRevAccelBeams.22.123402
spellingShingle Jiahang Shao
Mitchell Schneider
Gongxiaohui Chen
Tanvi Nikhar
Kiran Kumar Kovi
Linda Spentzouris
Eric Wisniewski
John Power
Manoel Conde
Wanming Liu
Sergey V. Baryshev
High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
Physical Review Accelerators and Beams
title High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
title_full High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
title_fullStr High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
title_full_unstemmed High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
title_short High power conditioning and benchmarking of planar nitrogen-incorporated ultrananocrystalline diamond field emission electron source
title_sort high power conditioning and benchmarking of planar nitrogen incorporated ultrananocrystalline diamond field emission electron source
url http://doi.org/10.1103/PhysRevAccelBeams.22.123402
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