Photo-Electric response of 4H-SiC APDs at High-Level incident flux
In many applications, the highest and lowest detectable flux are both important for single photon avalanche photodiodes (APDs). The photocurrent and single-photon-counting performance of 4H-SiC APDs are investigated under a wide-range incident flux. Experimental results show that the photocurrent is...
| Main Authors: | , , , , |
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Elsevier
2023-07-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723004011 |
| _version_ | 1797802249247784960 |
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| author | Fei Liu Jinlu Wang Danbei Wang Dong Zhou Hai Lu |
| author_facet | Fei Liu Jinlu Wang Danbei Wang Dong Zhou Hai Lu |
| author_sort | Fei Liu |
| collection | DOAJ |
| description | In many applications, the highest and lowest detectable flux are both important for single photon avalanche photodiodes (APDs). The photocurrent and single-photon-counting performance of 4H-SiC APDs are investigated under a wide-range incident flux. Experimental results show that the photocurrent is sub-linearly with the incident photon rate at high-level incident flux. In addition, the ratio of photon count rate to dark count rate is non-monotonic when the incident flux increases. The highest detectable flux of the 4H-SiC APD can be extended from 3 × 103 photons/s·μm2 to more than 4 × 104 photons/s·μm2 by reducing the threshold voltage and increasing the reverse voltage. |
| first_indexed | 2024-03-13T05:03:05Z |
| format | Article |
| id | doaj.art-8c2720a6874a421c8e337e2142c218d5 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-13T05:03:05Z |
| publishDate | 2023-07-01 |
| publisher | Elsevier |
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| series | Results in Physics |
| spelling | doaj.art-8c2720a6874a421c8e337e2142c218d52023-06-17T05:18:17ZengElsevierResults in Physics2211-37972023-07-0150106608Photo-Electric response of 4H-SiC APDs at High-Level incident fluxFei Liu0Jinlu Wang1Danbei Wang2Dong Zhou3Hai Lu4School of Electronics and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China; School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.School of Electronics and Information Engineering, Jinling Institute of Technology, Nanjing 211169, ChinaSchool of Electronics and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China; School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; Corresponding authors.School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaIn many applications, the highest and lowest detectable flux are both important for single photon avalanche photodiodes (APDs). The photocurrent and single-photon-counting performance of 4H-SiC APDs are investigated under a wide-range incident flux. Experimental results show that the photocurrent is sub-linearly with the incident photon rate at high-level incident flux. In addition, the ratio of photon count rate to dark count rate is non-monotonic when the incident flux increases. The highest detectable flux of the 4H-SiC APD can be extended from 3 × 103 photons/s·μm2 to more than 4 × 104 photons/s·μm2 by reducing the threshold voltage and increasing the reverse voltage.http://www.sciencedirect.com/science/article/pii/S22113797230040114H-SiCAPDUltraviolet |
| spellingShingle | Fei Liu Jinlu Wang Danbei Wang Dong Zhou Hai Lu Photo-Electric response of 4H-SiC APDs at High-Level incident flux Results in Physics 4H-SiC APD Ultraviolet |
| title | Photo-Electric response of 4H-SiC APDs at High-Level incident flux |
| title_full | Photo-Electric response of 4H-SiC APDs at High-Level incident flux |
| title_fullStr | Photo-Electric response of 4H-SiC APDs at High-Level incident flux |
| title_full_unstemmed | Photo-Electric response of 4H-SiC APDs at High-Level incident flux |
| title_short | Photo-Electric response of 4H-SiC APDs at High-Level incident flux |
| title_sort | photo electric response of 4h sic apds at high level incident flux |
| topic | 4H-SiC APD Ultraviolet |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723004011 |
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