Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs will increase the power handling capability a...
| Hlavní autoři: | , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
IEEE
2019-01-01
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| Edice: | IEEE Access |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/8918415/ |