Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding
Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophili...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-01-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4975345 |
| _version_ | 1818158521846333440 |
|---|---|
| author | Kewei Gong Changzheng Sun Bing Xiong Yanjun Han Zhibiao Hao Jian Wang Lai Wang Hongtao Li |
| author_facet | Kewei Gong Changzheng Sun Bing Xiong Yanjun Han Zhibiao Hao Jian Wang Lai Wang Hongtao Li |
| author_sort | Kewei Gong |
| collection | DOAJ |
| description | Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding. |
| first_indexed | 2024-12-11T15:31:25Z |
| format | Article |
| id | doaj.art-8c2ebf74664e41b391765f0bce348bc4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T15:31:25Z |
| publishDate | 2017-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8c2ebf74664e41b391765f0bce348bc42022-12-22T01:00:03ZengAIP Publishing LLCAIP Advances2158-32262017-01-0171015039015039-510.1063/1.4975345084701ADVOxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bondingKewei Gong0Changzheng Sun1Bing Xiong2Yanjun Han3Zhibiao Hao4Jian Wang5Lai Wang6Hongtao Li7Tsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaSuccessful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.http://dx.doi.org/10.1063/1.4975345 |
| spellingShingle | Kewei Gong Changzheng Sun Bing Xiong Yanjun Han Zhibiao Hao Jian Wang Lai Wang Hongtao Li Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding AIP Advances |
| title | Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding |
| title_full | Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding |
| title_fullStr | Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding |
| title_full_unstemmed | Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding |
| title_short | Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding |
| title_sort | oxides formation on hydrophilic bonding interface in plasma assisted inp al2o3 soi direct wafer bonding |
| url | http://dx.doi.org/10.1063/1.4975345 |
| work_keys_str_mv | AT keweigong oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT changzhengsun oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT bingxiong oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT yanjunhan oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT zhibiaohao oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT jianwang oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT laiwang oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding AT hongtaoli oxidesformationonhydrophilicbondinginterfaceinplasmaassistedinpal2o3soidirectwaferbonding |