Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers
Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), wh...
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MDPI AG
2023-09-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/17/6060 |
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| author | Pao-Hsun Huang Sih-An Chen Li-Wei Chao Jia-Xun Xie Ching-Yu Liao Zong-Liang Tseng Sheng-Hui Chen |
| author_facet | Pao-Hsun Huang Sih-An Chen Li-Wei Chao Jia-Xun Xie Ching-Yu Liao Zong-Liang Tseng Sheng-Hui Chen |
| author_sort | Pao-Hsun Huang |
| collection | DOAJ |
| description | Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr<sub>3</sub> QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m<sup>2</sup> and an external quantum efficiency (EQE) up to 3.63%. |
| first_indexed | 2024-03-10T23:18:35Z |
| format | Article |
| id | doaj.art-8c6ddd68b1d8439ba8b7cf75e5a403e0 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T23:18:35Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-8c6ddd68b1d8439ba8b7cf75e5a403e02023-11-19T08:29:42ZengMDPI AGMaterials1996-19442023-09-011617606010.3390/ma16176060Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection LayersPao-Hsun Huang0Sih-An Chen1Li-Wei Chao2Jia-Xun Xie3Ching-Yu Liao4Zong-Liang Tseng5Sheng-Hui Chen6School of Ocean Information Engineering, Jimei University, Jimei District, Xiamen 361021, ChinaOrganic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, TaiwanOrganic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, TaiwanOrganic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, TaiwanOrganic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, TaiwanOrganic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, TaiwanDepartment of Optics and Photonics, National Central University, Taoyuan 320317, TaiwanPerovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr<sub>3</sub> QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m<sup>2</sup> and an external quantum efficiency (EQE) up to 3.63%.https://www.mdpi.com/1996-1944/16/17/6060CsPbBr<sub>3</sub> quantum dotlight-emitting diodeNiOsputter |
| spellingShingle | Pao-Hsun Huang Sih-An Chen Li-Wei Chao Jia-Xun Xie Ching-Yu Liao Zong-Liang Tseng Sheng-Hui Chen Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers Materials CsPbBr<sub>3</sub> quantum dot light-emitting diode NiO sputter |
| title | Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
| title_full | Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
| title_fullStr | Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
| title_full_unstemmed | Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
| title_short | Efficient CsPbBr<sub>3</sub> Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers |
| title_sort | efficient cspbbr sub 3 sub quantum dot light emitting diodes using sputtered nio films as hole injection layers |
| topic | CsPbBr<sub>3</sub> quantum dot light-emitting diode NiO sputter |
| url | https://www.mdpi.com/1996-1944/16/17/6060 |
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