| Summary: | Double layered stacks of ZrO<sub>2</sub> and SnO<sub>2</sub> films, aiming at the synthesis of thin magnetic and elastic material layers, were grown by atomic layer deposition to thicknesses in the range of 20–25 nm at 300 °C from ZrCl<sub>4</sub>, SnI<sub>4</sub>, H<sub>2</sub>O, and O<sub>3</sub> as precursors. The as-deposited nanostructures consisted of a metastable tetragonal polymorph of ZrO<sub>2</sub>, and a stable tetragonal phase of SnO<sub>2</sub>, with complementary minor reflections from the orthorhombic polymorph of SnO<sub>2</sub>. The hardness and elastic modulus of the stacks depended on the order of the constituent oxide films, reaching 15 and 171 GPa, respectively, in the case of top SnO<sub>2</sub> layers. Nonlinear saturative magnetization could be induced in the stacks with coercive fields up to 130 Oe.
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