Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero b...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/9/812 |
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| author | Dung-Sheng Tsai Ping-Yu Chiang Meng-Lin Tsai Wei-Chen Tu Chi Chen Shih-Lun Chen Ching-Hsueh Chiu Chen-Yu Li Wu-Yih Uen |
| author_facet | Dung-Sheng Tsai Ping-Yu Chiang Meng-Lin Tsai Wei-Chen Tu Chi Chen Shih-Lun Chen Ching-Hsueh Chiu Chen-Yu Li Wu-Yih Uen |
| author_sort | Dung-Sheng Tsai |
| collection | DOAJ |
| description | This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm<sup>2</sup>) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 10<sup>3</sup> cm<sup>2</sup>/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (<i>D</i>*) is 8 × 10<sup>12</sup> cmHz<sup>1/2</sup>/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future. |
| first_indexed | 2024-03-10T16:47:02Z |
| format | Article |
| id | doaj.art-8ca3ad1d6b744e7c99662dc5bc7f4f92 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T16:47:02Z |
| publishDate | 2020-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-8ca3ad1d6b744e7c99662dc5bc7f4f922023-11-20T11:31:31ZengMDPI AGMicromachines2072-666X2020-08-0111981210.3390/mi11090812Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband PhotodetectionDung-Sheng Tsai0Ping-Yu Chiang1Meng-Lin Tsai2Wei-Chen Tu3Chi Chen4Shih-Lun Chen5Ching-Hsueh Chiu6Chen-Yu Li7Wu-Yih Uen8Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 32023, TaiwanDepartment of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 32023, TaiwanDepartment of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan 70101, TaiwanResearch Center for Applied Science, Academia Sinica, Taipei 11529, TaiwanDepartment of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 32023, TaiwanDepartment of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 32023, TaiwanXsense Technology Corp., Miaoli County 35053, TaiwanDepartment of Electronic Engineering, Chung Yuan Christian University, Taoyuan City 32023, TaiwanThis work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm<sup>2</sup>) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 10<sup>3</sup> cm<sup>2</sup>/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (<i>D</i>*) is 8 × 10<sup>12</sup> cmHz<sup>1/2</sup>/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.https://www.mdpi.com/2072-666X/11/9/812graphenecamphor-based CVDself-power photodetectorgraphene/Si PDs |
| spellingShingle | Dung-Sheng Tsai Ping-Yu Chiang Meng-Lin Tsai Wei-Chen Tu Chi Chen Shih-Lun Chen Ching-Hsueh Chiu Chen-Yu Li Wu-Yih Uen Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection Micromachines graphene camphor-based CVD self-power photodetector graphene/Si PDs |
| title | Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection |
| title_full | Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection |
| title_fullStr | Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection |
| title_full_unstemmed | Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection |
| title_short | Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection |
| title_sort | camphor based cvd bilayer graphene si heterostructures for self powered and broadband photodetection |
| topic | graphene camphor-based CVD self-power photodetector graphene/Si PDs |
| url | https://www.mdpi.com/2072-666X/11/9/812 |
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