Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting
This work aims to estimate the Curie temperature and critical exponents in the critical regime of III-V ferromagnetic semiconductor (FS) (Ga,Mn)P film using various methods, including Arrott and Kouvel-Fisher plots, as well as electrical transport measurements. The (Ga,Mn)P film was prepared by impl...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724001906 |
| _version_ | 1797259983861055488 |
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| author | Mingyang Tian Qingyun Yang Ye Yuan U. Kentsch Ke Liu Mingjun Tang Zhengwei Xie Ling Li Mao Wang |
| author_facet | Mingyang Tian Qingyun Yang Ye Yuan U. Kentsch Ke Liu Mingjun Tang Zhengwei Xie Ling Li Mao Wang |
| author_sort | Mingyang Tian |
| collection | DOAJ |
| description | This work aims to estimate the Curie temperature and critical exponents in the critical regime of III-V ferromagnetic semiconductor (FS) (Ga,Mn)P film using various methods, including Arrott and Kouvel-Fisher plots, as well as electrical transport measurements. The (Ga,Mn)P film was prepared by implanting Mn ions into an intrinsic (001) GaP wafer, followed by pulsed laser melting (PLM). The magnetic properties of the (Ga,Mn)P layer were systematically investigated. The study investigated the accuracy of four different methods in determining the critical behaviors for the magnetic properties close to TC. The results suggest that the critical exponents are similar to those of the mean-field model, as indicated by the modified Arrot plots and temperature dependent effective critical exponents. However, the accuracy of the temperature-dependent resistance Rxx(T) method and Kouvel-Fisher (K-F) analysis is limited due to the Gaussian distribution of Mn ions in the film. |
| first_indexed | 2024-03-07T21:44:36Z |
| format | Article |
| id | doaj.art-8ca6438c0e87449789196763c724d3b0 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-24T23:18:06Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-8ca6438c0e87449789196763c724d3b02024-03-17T07:53:44ZengElsevierResults in Physics2211-37972024-03-0158107508Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser meltingMingyang Tian0Qingyun Yang1Ye Yuan2U. Kentsch3Ke Liu4Mingjun Tang5Zhengwei Xie6Ling Li7Mao Wang8Laboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaSongshan Lake Materials Laboratory, Dongguan 523808, China, People's Republic of ChinaHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, GermanyLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany; Corresponding author.This work aims to estimate the Curie temperature and critical exponents in the critical regime of III-V ferromagnetic semiconductor (FS) (Ga,Mn)P film using various methods, including Arrott and Kouvel-Fisher plots, as well as electrical transport measurements. The (Ga,Mn)P film was prepared by implanting Mn ions into an intrinsic (001) GaP wafer, followed by pulsed laser melting (PLM). The magnetic properties of the (Ga,Mn)P layer were systematically investigated. The study investigated the accuracy of four different methods in determining the critical behaviors for the magnetic properties close to TC. The results suggest that the critical exponents are similar to those of the mean-field model, as indicated by the modified Arrot plots and temperature dependent effective critical exponents. However, the accuracy of the temperature-dependent resistance Rxx(T) method and Kouvel-Fisher (K-F) analysis is limited due to the Gaussian distribution of Mn ions in the film.http://www.sciencedirect.com/science/article/pii/S2211379724001906Magnetic propertiesIon implantationElectrical transportFerromagneticIII-V ferromagnetic semiconductors |
| spellingShingle | Mingyang Tian Qingyun Yang Ye Yuan U. Kentsch Ke Liu Mingjun Tang Zhengwei Xie Ling Li Mao Wang Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting Results in Physics Magnetic properties Ion implantation Electrical transport Ferromagnetic III-V ferromagnetic semiconductors |
| title | Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting |
| title_full | Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting |
| title_fullStr | Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting |
| title_full_unstemmed | Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting |
| title_short | Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting |
| title_sort | approaching the curie temperature of ferromagnetic ga mn p prepared by ion implantation and pulsed laser melting |
| topic | Magnetic properties Ion implantation Electrical transport Ferromagnetic III-V ferromagnetic semiconductors |
| url | http://www.sciencedirect.com/science/article/pii/S2211379724001906 |
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