Floating Body DRAM with Body Raised and Source/Drain Separation
One-Transistor (1T) DRAMs are one of the potential replacements for conventional 1T-1C dynamic memory cells for future scaling of embedded and stand-alone memory architectures. In this work, a scaled (channel length 10nm) floating body 1T memory device architecture with ultra-thin body is studied, w...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/6/706 |
| _version_ | 1797540984349786112 |
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| author | Gino Giusi |
| author_facet | Gino Giusi |
| author_sort | Gino Giusi |
| collection | DOAJ |
| description | One-Transistor (1T) DRAMs are one of the potential replacements for conventional 1T-1C dynamic memory cells for future scaling of embedded and stand-alone memory architectures. In this work, a scaled (channel length 10nm) floating body 1T memory device architecture with ultra-thin body is studied, which uses a combined approach of a body raised storage region and separated source/drain regions having the role to reduce thermal and field enhanced band-to-band recombination. The physical mechanisms along the geometry and bias scaling are discussed in order to address the requirements of embedded or stand-alone applications. Two-dimensional device simulations show that, with proper optimization of the geometry and bias, the combined approach allows the increase of the retention time and of the programming window by more than one order of magnitude. |
| first_indexed | 2024-03-10T13:08:48Z |
| format | Article |
| id | doaj.art-8cd4ac6fad214789b18bf4de295ee219 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T13:08:48Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-8cd4ac6fad214789b18bf4de295ee2192023-11-21T10:55:30ZengMDPI AGElectronics2079-92922021-03-0110670610.3390/electronics10060706Floating Body DRAM with Body Raised and Source/Drain SeparationGino Giusi0Engineering Department, University of Messina, I-98166 Messina, ItalyOne-Transistor (1T) DRAMs are one of the potential replacements for conventional 1T-1C dynamic memory cells for future scaling of embedded and stand-alone memory architectures. In this work, a scaled (channel length 10nm) floating body 1T memory device architecture with ultra-thin body is studied, which uses a combined approach of a body raised storage region and separated source/drain regions having the role to reduce thermal and field enhanced band-to-band recombination. The physical mechanisms along the geometry and bias scaling are discussed in order to address the requirements of embedded or stand-alone applications. Two-dimensional device simulations show that, with proper optimization of the geometry and bias, the combined approach allows the increase of the retention time and of the programming window by more than one order of magnitude.https://www.mdpi.com/2079-9292/10/6/706one-transistor dynamic random-access memoryfloating bodyultra-thin bodytrap assisted tunnelingband to band tunnelingdevice simulations |
| spellingShingle | Gino Giusi Floating Body DRAM with Body Raised and Source/Drain Separation Electronics one-transistor dynamic random-access memory floating body ultra-thin body trap assisted tunneling band to band tunneling device simulations |
| title | Floating Body DRAM with Body Raised and Source/Drain Separation |
| title_full | Floating Body DRAM with Body Raised and Source/Drain Separation |
| title_fullStr | Floating Body DRAM with Body Raised and Source/Drain Separation |
| title_full_unstemmed | Floating Body DRAM with Body Raised and Source/Drain Separation |
| title_short | Floating Body DRAM with Body Raised and Source/Drain Separation |
| title_sort | floating body dram with body raised and source drain separation |
| topic | one-transistor dynamic random-access memory floating body ultra-thin body trap assisted tunneling band to band tunneling device simulations |
| url | https://www.mdpi.com/2079-9292/10/6/706 |
| work_keys_str_mv | AT ginogiusi floatingbodydramwithbodyraisedandsourcedrainseparation |