Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films

τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at...

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Main Authors: D. Scheffler, S. Beckert, H. Reichlova, T. G. Woodcock, S. T. B. Goennenwein, A. Thomas
Format: Article
Language:English
Published: AIP Publishing LLC 2023-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0179071
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author D. Scheffler
S. Beckert
H. Reichlova
T. G. Woodcock
S. T. B. Goennenwein
A. Thomas
author_facet D. Scheffler
S. Beckert
H. Reichlova
T. G. Woodcock
S. T. B. Goennenwein
A. Thomas
author_sort D. Scheffler
collection DOAJ
description τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.
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spelling doaj.art-8ce94f58d2f44e5e9b3d73196302b3452024-01-03T19:51:07ZengAIP Publishing LLCAIP Advances2158-32262023-12-011312125227125227-510.1063/5.0179071Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin filmsD. Scheffler0S. Beckert1H. Reichlova2T. G. Woodcock3S. T. B. Goennenwein4A. Thomas5Institute for Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, GermanyInstitute for Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, GermanyInstitute for Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, GermanyLeibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), 01069 Dresden, GermanyDepartment of Physics, University of Konstanz, 78457 Konstanz, GermanyInstitute for Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, Germanyτ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.http://dx.doi.org/10.1063/5.0179071
spellingShingle D. Scheffler
S. Beckert
H. Reichlova
T. G. Woodcock
S. T. B. Goennenwein
A. Thomas
Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
AIP Advances
title Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
title_full Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
title_fullStr Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
title_full_unstemmed Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
title_short Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
title_sort anomalous nernst effect in perpendicularly magnetized τ mnal thin films
url http://dx.doi.org/10.1063/5.0179071
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