Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

A new approach based on the irradiation by heavy high energy ions (Xe ions with 26 and 167 MeV) was used for the creation of graphene quantum dots in the fluorinated matrix and the formation of the memristors in double-layer structures consisting of fluorinated graphene (FG) on polyvinyl alcohol (PV...

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Bibliographic Details
Main Authors: Artem I. Ivanov, Irina V. Antonova, Nadezhda A. Nebogatikova, Andrzej Olejniczak
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
fluorinated graphene
high energy ion irradiation
graphene quantum dots
flexible memristors
FG–PVA active layer
pulse measurements
Online Access:https://www.mdpi.com/1996-1944/15/6/2085

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https://www.mdpi.com/1996-1944/15/6/2085

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