Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties
In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. X-ray diffraction (XRD) confirms the formation of porous silicon and the crystal size is reduced toward nanometri...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2015-04-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_105392_f98e95f0154f73c9d002ae4f41a2780c.pdf |
| _version_ | 1827358687567544320 |
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| author | Zahraa J. Abdulkareem Uday M. Nayef Kadhim A.Hubeatir |
| author_facet | Zahraa J. Abdulkareem Uday M. Nayef Kadhim A.Hubeatir |
| author_sort | Zahraa J. Abdulkareem |
| collection | DOAJ |
| description | In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. X-ray diffraction (XRD) confirms the formation of porous silicon and the crystal size is reduced toward nanometric scale. The Atomic Force Microscope (AFM) investigation shows the sponge like structure of PS, the width of surface pits and surface roughness increase with etching current density.Finally, the Fourier Transform Infrared (FTIR) illustrates the PS layer have large amount of dangling bonds. |
| first_indexed | 2024-03-08T06:14:41Z |
| format | Article |
| id | doaj.art-8d3f8b84bc154c78a1444dcd9cdd8779 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:14:41Z |
| publishDate | 2015-04-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-8d3f8b84bc154c78a1444dcd9cdd87792024-02-04T17:28:14ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582015-04-01334B59560110.30684/etj.33.4B.3105392Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical PropertiesZahraa J. AbdulkareemUday M. NayefKadhim A.HubeatirIn this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. X-ray diffraction (XRD) confirms the formation of porous silicon and the crystal size is reduced toward nanometric scale. The Atomic Force Microscope (AFM) investigation shows the sponge like structure of PS, the width of surface pits and surface roughness increase with etching current density.Finally, the Fourier Transform Infrared (FTIR) illustrates the PS layer have large amount of dangling bonds.https://etj.uotechnology.edu.iq/article_105392_f98e95f0154f73c9d002ae4f41a2780c.pdfporous siliconphotoelectrochemical etchingxrdafmftir |
| spellingShingle | Zahraa J. Abdulkareem Uday M. Nayef Kadhim A.Hubeatir Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties Engineering and Technology Journal porous silicon photoelectrochemical etching xrd afm ftir |
| title | Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties |
| title_full | Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties |
| title_fullStr | Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties |
| title_full_unstemmed | Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties |
| title_short | Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties |
| title_sort | investigation of laser assisted etching for preparation silicon nanostructure and diagnostic physical properties |
| topic | porous silicon photoelectrochemical etching xrd afm ftir |
| url | https://etj.uotechnology.edu.iq/article_105392_f98e95f0154f73c9d002ae4f41a2780c.pdf |
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