| Summary: | The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula> model in devices with SiO2-SiNx layers, and by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$\Delta \mu $ </tex-math></inline-formula> model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.
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