Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs
The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main componen...
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| Format: | Article |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10466727/ |
| _version_ | 1797213604044341248 |
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| author | Yayi Chen Xingji Liu Dengyun Lei Yuan Liu Rongsheng Chen Yao Ni Hoi-Sing Kwok Wei Zhong |
| author_facet | Yayi Chen Xingji Liu Dengyun Lei Yuan Liu Rongsheng Chen Yao Ni Hoi-Sing Kwok Wei Zhong |
| author_sort | Yayi Chen |
| collection | DOAJ |
| description | The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula> model in devices with SiO2-SiNx layers, and by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$\Delta \mu $ </tex-math></inline-formula> model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs. |
| first_indexed | 2024-04-24T11:00:55Z |
| format | Article |
| id | doaj.art-8d56377d2d404c46b858bcfbcd875aa8 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-24T11:00:55Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8d56377d2d404c46b858bcfbcd875aa82024-04-11T23:00:13ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011227528010.1109/JEDS.2024.337586710466727Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTsYayi Chen0https://orcid.org/0000-0002-8281-7246Xingji Liu1Dengyun Lei2https://orcid.org/0000-0001-8935-649XYuan Liu3https://orcid.org/0000-0002-7289-2103Rongsheng Chen4https://orcid.org/0000-0002-7247-8420Yao Ni5https://orcid.org/0000-0002-6370-4799Hoi-Sing Kwok6https://orcid.org/0000-0002-2820-9530Wei Zhong7https://orcid.org/0000-0001-8935-649XSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaSchool of Microelectronics, South China University of Technology, Guangzhou, ChinaSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaDepartment of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, ChinaSchool of Integrated Circuits, Guangdong University of Technology, Guangzhou, ChinaThe compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula> model in devices with SiO2-SiNx layers, and by the <inline-formula> <tex-math notation="LaTeX">$\Delta \text{N}$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$\Delta \mu $ </tex-math></inline-formula> model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.https://ieeexplore.ieee.org/document/10466727/InZnOthin film transistorslow frequency noiseBSIM-CMG |
| spellingShingle | Yayi Chen Xingji Liu Dengyun Lei Yuan Liu Rongsheng Chen Yao Ni Hoi-Sing Kwok Wei Zhong Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs IEEE Journal of the Electron Devices Society InZnO thin film transistors low frequency noise BSIM-CMG |
| title | Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs |
| title_full | Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs |
| title_fullStr | Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs |
| title_full_unstemmed | Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs |
| title_short | Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs |
| title_sort | compatibility of the bsim cmg to the low frequency noise simulation in subthreshold and linear regions of amorphous inzno tfts |
| topic | InZnO thin film transistors low frequency noise BSIM-CMG |
| url | https://ieeexplore.ieee.org/document/10466727/ |
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