Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs
The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main componen...
Main Authors: | Yayi Chen, Xingji Liu, Dengyun Lei, Yuan Liu, Rongsheng Chen, Yao Ni, Hoi-Sing Kwok, Wei Zhong |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10466727/ |
Similar Items
-
BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology
by: Avirup Dasgupta, et al.
Published: (2020-12-01) -
Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise
by: Ya-Yi Chen, et al.
Published: (2021-01-01) -
Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes
by: Swapna Sarker, et al.
Published: (2023-01-01) -
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning
by: Jun Hui Park, et al.
Published: (2024-01-01) -
CMG helicase disassembly is controlled by replication fork DNA, replisome components and a ubiquitin threshold
by: Tom D Deegan, et al.
Published: (2020-08-01)