Berry curvature engineering by gating two-dimensional antiferromagnets
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tun...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2020-05-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.2.022025 |
| _version_ | 1827286188393758720 |
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| author | Shiqiao Du Peizhe Tang Jiaheng Li Zuzhang Lin Yong Xu Wenhui Duan Angel Rubio |
| author_facet | Shiqiao Du Peizhe Tang Jiaheng Li Zuzhang Lin Yong Xu Wenhui Duan Angel Rubio |
| author_sort | Shiqiao Du |
| collection | DOAJ |
| description | Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi_{2}Te_{4} thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi_{2}Te_{4} thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications. |
| first_indexed | 2024-04-24T10:27:12Z |
| format | Article |
| id | doaj.art-8d5a1ff03e9f412fa49607172ae43ca3 |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:27:12Z |
| publishDate | 2020-05-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-8d5a1ff03e9f412fa49607172ae43ca32024-04-12T16:53:26ZengAmerican Physical SocietyPhysical Review Research2643-15642020-05-012202202510.1103/PhysRevResearch.2.022025Berry curvature engineering by gating two-dimensional antiferromagnetsShiqiao DuPeizhe TangJiaheng LiZuzhang LinYong XuWenhui DuanAngel RubioRecent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi_{2}Te_{4} thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi_{2}Te_{4} thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications.http://doi.org/10.1103/PhysRevResearch.2.022025 |
| spellingShingle | Shiqiao Du Peizhe Tang Jiaheng Li Zuzhang Lin Yong Xu Wenhui Duan Angel Rubio Berry curvature engineering by gating two-dimensional antiferromagnets Physical Review Research |
| title | Berry curvature engineering by gating two-dimensional antiferromagnets |
| title_full | Berry curvature engineering by gating two-dimensional antiferromagnets |
| title_fullStr | Berry curvature engineering by gating two-dimensional antiferromagnets |
| title_full_unstemmed | Berry curvature engineering by gating two-dimensional antiferromagnets |
| title_short | Berry curvature engineering by gating two-dimensional antiferromagnets |
| title_sort | berry curvature engineering by gating two dimensional antiferromagnets |
| url | http://doi.org/10.1103/PhysRevResearch.2.022025 |
| work_keys_str_mv | AT shiqiaodu berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT peizhetang berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT jiahengli berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT zuzhanglin berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT yongxu berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT wenhuiduan berrycurvatureengineeringbygatingtwodimensionalantiferromagnets AT angelrubio berrycurvatureengineeringbygatingtwodimensionalantiferromagnets |