Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs
This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were expo...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/6/698 |
| _version_ | 1797999896846925824 |
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| author | Alina Caddemi Emanuele Cardillo Salvatore Patanè Claudia Triolo |
| author_facet | Alina Caddemi Emanuele Cardillo Salvatore Patanè Claudia Triolo |
| author_sort | Alina Caddemi |
| collection | DOAJ |
| description | This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices. |
| first_indexed | 2024-04-11T11:11:56Z |
| format | Article |
| id | doaj.art-8d7d13ae8f0b4adfb9ccef08fe066eab |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T11:11:56Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-8d7d13ae8f0b4adfb9ccef08fe066eab2022-12-22T04:27:26ZengMDPI AGElectronics2079-92922019-06-018669810.3390/electronics8060698electronics8060698Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTsAlina Caddemi0Emanuele Cardillo1Salvatore Patanè2Claudia Triolo3Department of Engineering, University of Messina, 98166 Messina, ItalyDepartment of Engineering, University of Messina, 98166 Messina, ItalyDipartimento di Scienze Matematiche e Informatiche, Scienze Fisiche e Scienze della Terra, University of Messina, 98166 Messina, ItalyDipartimento di Scienze Matematiche e Informatiche, Scienze Fisiche e Scienze della Terra, University of Messina, 98166 Messina, ItalyThis paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.https://www.mdpi.com/2079-9292/8/6/698GaN HEMToptical behaviorlight exposurelaserkink effect |
| spellingShingle | Alina Caddemi Emanuele Cardillo Salvatore Patanè Claudia Triolo Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs Electronics GaN HEMT optical behavior light exposure laser kink effect |
| title | Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs |
| title_full | Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs |
| title_fullStr | Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs |
| title_full_unstemmed | Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs |
| title_short | Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs |
| title_sort | light exposure effects on the dc kink of algan gan hemts |
| topic | GaN HEMT optical behavior light exposure laser kink effect |
| url | https://www.mdpi.com/2079-9292/8/6/698 |
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