Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were expo...

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Bibliographic Details
Main Authors:	Alina Caddemi, Emanuele Cardillo, Salvatore Patanè, Claudia Triolo
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Electronics
Subjects:	GaN HEMT optical behavior light exposure laser kink effect
Online Access:	https://www.mdpi.com/2079-9292/8/6/698

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