Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films
Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In<sub>2</sub>Se<sub>3</sub> has been of particular interest because of its ability to exhibi...
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| Format: | Article |
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MDPI AG
2023-05-01
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| Series: | Nanomaterials |
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| author | Qinghao Meng Fan Yu Gan Liu Junyu Zong Qichao Tian Kaili Wang Xiaodong Qiu Can Wang Xiaoxiang Xi Yi Zhang |
| author_facet | Qinghao Meng Fan Yu Gan Liu Junyu Zong Qichao Tian Kaili Wang Xiaodong Qiu Can Wang Xiaoxiang Xi Yi Zhang |
| author_sort | Qinghao Meng |
| collection | DOAJ |
| description | Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In<sub>2</sub>Se<sub>3</sub> has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of <i>β–In<sub>2</sub>Se<sub>3</sub></i> films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer <i>β–In<sub>2</sub>Se<sub>3</sub></i> is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer <i>β–In<sub>2</sub>Se<sub>3</sub></i>/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In<sub>2</sub>Se<sub>3</sub> film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality <i>β–In<sub>2</sub>Se<sub>3</sub></i> thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> films. |
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| language | English |
| last_indexed | 2024-03-11T04:11:16Z |
| publishDate | 2023-05-01 |
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| series | Nanomaterials |
| spelling | doaj.art-8da08523a4204c65986992b5a90caab12023-11-17T23:27:21ZengMDPI AGNanomaterials2079-49912023-05-01139153310.3390/nano13091533Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin FilmsQinghao Meng0Fan Yu1Gan Liu2Junyu Zong3Qichao Tian4Kaili Wang5Xiaodong Qiu6Can Wang7Xiaoxiang Xi8Yi Zhang9National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaFerroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In<sub>2</sub>Se<sub>3</sub> has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of <i>β–In<sub>2</sub>Se<sub>3</sub></i> films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer <i>β–In<sub>2</sub>Se<sub>3</sub></i> is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer <i>β–In<sub>2</sub>Se<sub>3</sub></i>/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In<sub>2</sub>Se<sub>3</sub> film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality <i>β–In<sub>2</sub>Se<sub>3</sub></i> thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> films.https://www.mdpi.com/2079-4991/13/9/1533In<sub>2</sub>Se<sub>3</sub>electronic structuresurface reconstructionmolecular beam epitaxyangle-resolved photoemission spectroscopy |
| spellingShingle | Qinghao Meng Fan Yu Gan Liu Junyu Zong Qichao Tian Kaili Wang Xiaodong Qiu Can Wang Xiaoxiang Xi Yi Zhang Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films Nanomaterials In<sub>2</sub>Se<sub>3</sub> electronic structure surface reconstruction molecular beam epitaxy angle-resolved photoemission spectroscopy |
| title | Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films |
| title_full | Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films |
| title_fullStr | Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films |
| title_full_unstemmed | Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films |
| title_short | Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial <i>β–In<sub>2</sub>Se<sub>3</sub></i> Thin Films |
| title_sort | thickness dependent evolutions of surface reconstruction and band structures in epitaxial i β in sub 2 sub se sub 3 sub i thin films |
| topic | In<sub>2</sub>Se<sub>3</sub> electronic structure surface reconstruction molecular beam epitaxy angle-resolved photoemission spectroscopy |
| url | https://www.mdpi.com/2079-4991/13/9/1533 |
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