The ferroelectric field-effect transistor with negative capacitance
Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a dau...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-03-01
|
| Series: | npj Computational Materials |
| Online Access: | https://doi.org/10.1038/s41524-022-00738-2 |
| _version_ | 1811272091573420032 |
|---|---|
| author | I. Luk’yanchuk A. Razumnaya A. Sené Y. Tikhonov V. M. Vinokur |
| author_facet | I. Luk’yanchuk A. Razumnaya A. Sené Y. Tikhonov V. M. Vinokur |
| author_sort | I. Luk’yanchuk |
| collection | DOAJ |
| description | Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors. |
| first_indexed | 2024-04-12T22:34:07Z |
| format | Article |
| id | doaj.art-8daba6cad6ff4fb89d4de95db5ae9dd4 |
| institution | Directory Open Access Journal |
| issn | 2057-3960 |
| language | English |
| last_indexed | 2024-04-12T22:34:07Z |
| publishDate | 2022-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Computational Materials |
| spelling | doaj.art-8daba6cad6ff4fb89d4de95db5ae9dd42022-12-22T03:13:54ZengNature Portfolionpj Computational Materials2057-39602022-03-01811810.1038/s41524-022-00738-2The ferroelectric field-effect transistor with negative capacitanceI. Luk’yanchuk0A. Razumnaya1A. Sené2Y. Tikhonov3V. M. Vinokur4University of Picardie, Laboratory of Condensed Matter PhysicsTerra Quantum AGUniversity of Picardie, Laboratory of Condensed Matter PhysicsUniversity of Picardie, Laboratory of Condensed Matter PhysicsTerra Quantum AGAbstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.https://doi.org/10.1038/s41524-022-00738-2 |
| spellingShingle | I. Luk’yanchuk A. Razumnaya A. Sené Y. Tikhonov V. M. Vinokur The ferroelectric field-effect transistor with negative capacitance npj Computational Materials |
| title | The ferroelectric field-effect transistor with negative capacitance |
| title_full | The ferroelectric field-effect transistor with negative capacitance |
| title_fullStr | The ferroelectric field-effect transistor with negative capacitance |
| title_full_unstemmed | The ferroelectric field-effect transistor with negative capacitance |
| title_short | The ferroelectric field-effect transistor with negative capacitance |
| title_sort | ferroelectric field effect transistor with negative capacitance |
| url | https://doi.org/10.1038/s41524-022-00738-2 |
| work_keys_str_mv | AT ilukyanchuk theferroelectricfieldeffecttransistorwithnegativecapacitance AT arazumnaya theferroelectricfieldeffecttransistorwithnegativecapacitance AT asene theferroelectricfieldeffecttransistorwithnegativecapacitance AT ytikhonov theferroelectricfieldeffecttransistorwithnegativecapacitance AT vmvinokur theferroelectricfieldeffecttransistorwithnegativecapacitance AT ilukyanchuk ferroelectricfieldeffecttransistorwithnegativecapacitance AT arazumnaya ferroelectricfieldeffecttransistorwithnegativecapacitance AT asene ferroelectricfieldeffecttransistorwithnegativecapacitance AT ytikhonov ferroelectricfieldeffecttransistorwithnegativecapacitance AT vmvinokur ferroelectricfieldeffecttransistorwithnegativecapacitance |