The ferroelectric field-effect transistor with negative capacitance
Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a dau...
Main Authors: | I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V. M. Vinokur |
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Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2022-03-01
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Series: | npj Computational Materials |
Online Access: | https://doi.org/10.1038/s41524-022-00738-2 |
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