COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs
The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad. The MOSFET model is designed with the heatsink to ensure accurat...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
UTP Press
2021-06-01
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| Series: | Platform, a Journal of Engineering |
| Online Access: | https://myjms.mohe.gov.my/index.php/paje/article/view/v5n2-3/7271 |