Analysis of random telegraph noise in resistive memories: The case of unstable filaments

Analysis of random telegraph noise in resistive memories: The case of unstable filaments

Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations in case where unstable RTN signals occur. These in...

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Bibliographic Details
Main Authors: Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Micro and Nano Engineering
Subjects:
RRAM
ReRAM
Memristor
Silicon nitride
SOI
Random telegraph noise
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007223000357

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