Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory
Achieving both low energy consumption and radiation-hardness is highly challenging in memory devices. Here, the authors demonstrate a sub-10 fJ/bit, radiation-hard nanoelectromechanical non-volatile memory through structural and material approaches.
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-36076-0 |