High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring

Abstract Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional high‐temperature chemical vapor deposition (CVD)‐grown T...

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Main Authors: Rui Zhang, Jie Lin, Tao He, Jiafang Wu, Zhuojun Yang, Liwen Liu, Shaofeng Wen, Yimin Gong, Haifeng Lv, Jing Zhang, Yi Yin, Fangjia Li, Changyong Lan, Chun Li
Format: Article
Language:English
Published: Wiley 2024-01-01
Series:InfoMat
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Online Access:https://doi.org/10.1002/inf2.12484
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author Rui Zhang
Jie Lin
Tao He
Jiafang Wu
Zhuojun Yang
Liwen Liu
Shaofeng Wen
Yimin Gong
Haifeng Lv
Jing Zhang
Yi Yin
Fangjia Li
Changyong Lan
Chun Li
author_facet Rui Zhang
Jie Lin
Tao He
Jiafang Wu
Zhuojun Yang
Liwen Liu
Shaofeng Wen
Yimin Gong
Haifeng Lv
Jing Zhang
Yi Yin
Fangjia Li
Changyong Lan
Chun Li
author_sort Rui Zhang
collection DOAJ
description Abstract Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional high‐temperature chemical vapor deposition (CVD)‐grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication complexity. We present a high‐performance piezoresistive strain sensor that employs large‐area PdSe2 films grown directly on polyimide (PI) substrates via plasma‐assisted selenization of a sputtered Pd film. The reliable strain transfer from the substrate to the PdSe2 film ensures an outstanding strain‐sensing capability of the sensor. Specifically, the sensors have a gauge factor of up to −315 ± 2.1, a response time under 25 ms, a detection limit of 8 × 10−6, and an exceptional stability of over 104 loading–unloading cycles. By attaching the sensors to the skin surface, we demonstrate their application for measuring physiological parameters in health care monitoring, including motion, voice, and arterial pulse vibration. Furthermore, using the PdSe2 film sensor combined with deep learning technology, we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2% difference between predicted and actual temperatures. The excellent sensing performance, together with the advantages of low‐temperature fabrication and simple device structure, make the PdSe2 film sensor promising for wearable electronics and health care sensing systems.
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spelling doaj.art-8dca1f108acb43a7a2fd026c90ff307c2024-01-26T02:38:13ZengWileyInfoMat2567-31652024-01-0161n/an/a10.1002/inf2.12484High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoringRui Zhang0Jie Lin1Tao He2Jiafang Wu3Zhuojun Yang4Liwen Liu5Shaofeng Wen6Yimin Gong7Haifeng Lv8Jing Zhang9Yi Yin10Fangjia Li11Changyong Lan12Chun Li13State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaSchool of Physics University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaSchool of Physics University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaSichuan Academy of Medical Sciences and Sichuan People's Hospital Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu the People's Republic of ChinaAbstract Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional high‐temperature chemical vapor deposition (CVD)‐grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication complexity. We present a high‐performance piezoresistive strain sensor that employs large‐area PdSe2 films grown directly on polyimide (PI) substrates via plasma‐assisted selenization of a sputtered Pd film. The reliable strain transfer from the substrate to the PdSe2 film ensures an outstanding strain‐sensing capability of the sensor. Specifically, the sensors have a gauge factor of up to −315 ± 2.1, a response time under 25 ms, a detection limit of 8 × 10−6, and an exceptional stability of over 104 loading–unloading cycles. By attaching the sensors to the skin surface, we demonstrate their application for measuring physiological parameters in health care monitoring, including motion, voice, and arterial pulse vibration. Furthermore, using the PdSe2 film sensor combined with deep learning technology, we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2% difference between predicted and actual temperatures. The excellent sensing performance, together with the advantages of low‐temperature fabrication and simple device structure, make the PdSe2 film sensor promising for wearable electronics and health care sensing systems.https://doi.org/10.1002/inf2.12484layered crystalPdSe2piezoresistive effectstrain sensor
spellingShingle Rui Zhang
Jie Lin
Tao He
Jiafang Wu
Zhuojun Yang
Liwen Liu
Shaofeng Wen
Yimin Gong
Haifeng Lv
Jing Zhang
Yi Yin
Fangjia Li
Changyong Lan
Chun Li
High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
InfoMat
layered crystal
PdSe2
piezoresistive effect
strain sensor
title High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
title_full High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
title_fullStr High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
title_full_unstemmed High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
title_short High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring
title_sort high performance piezoresistive sensors based on transfer free large area pdse2 films for human motion and health care monitoring
topic layered crystal
PdSe2
piezoresistive effect
strain sensor
url https://doi.org/10.1002/inf2.12484
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