Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor
Temperature sensing is a necessity in semiconductor products, in order to monitor die behavior and avoid thermal runaway, while achieving high performance. Integrated sensors are used to monitor and regulate numerous hot spots across the die to prevent reliability issues. As the hot spots are in the...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9093007/ |
| _version_ | 1818663885555630080 |
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| author | Natan Vinshtok-Melnik Joseph Shor |
| author_facet | Natan Vinshtok-Melnik Joseph Shor |
| author_sort | Natan Vinshtok-Melnik |
| collection | DOAJ |
| description | Temperature sensing is a necessity in semiconductor products, in order to monitor die behavior and avoid thermal runaway, while achieving high performance. Integrated sensors are used to monitor and regulate numerous hot spots across the die to prevent reliability issues. As the hot spots are in the most congested areas of the chip, it is also desirable for the sensors to have a very small sensing element which can be placed close to the hot-spot. The sensors are also used to monitor the coldest parts of the chip to determine the required Vdd level. These functions require the sensors to be very compact as well as low energy. A ring oscillator based temperature sensor is presented in TSMCs 65nm node, with an area of 1850μm<sup>2</sup>. This sensor has a novel structure which is similar to a bandgap reference, with the BJT devices replaced by scaled ring oscillators. The sensor exhibits a 3-sigma inaccuracy of ±1°C near the throttle point, for hot-spot sensing, and ± 2.5°C over the -10°C to 110°C range. The power supply rejection is 2.4°C/V. The sensor consumes 0.94nJ per 10μs conversion and achieves a resolution FOM of 96pJ-K<sup>2</sup>. |
| first_indexed | 2024-12-17T05:23:57Z |
| format | Article |
| id | doaj.art-8dcc6297940c46869b461d56049ceedb |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-17T05:23:57Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-8dcc6297940c46869b461d56049ceedb2022-12-21T22:01:56ZengIEEEIEEE Access2169-35362020-01-018914159142310.1109/ACCESS.2020.29943269093007Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature SensorNatan Vinshtok-Melnik0Joseph Shor1https://orcid.org/0000-0002-9184-8642Faculty of Engineering, Bar Ilan University, Ramat Gan, IsraelFaculty of Engineering, Bar Ilan University, Ramat Gan, IsraelTemperature sensing is a necessity in semiconductor products, in order to monitor die behavior and avoid thermal runaway, while achieving high performance. Integrated sensors are used to monitor and regulate numerous hot spots across the die to prevent reliability issues. As the hot spots are in the most congested areas of the chip, it is also desirable for the sensors to have a very small sensing element which can be placed close to the hot-spot. The sensors are also used to monitor the coldest parts of the chip to determine the required Vdd level. These functions require the sensors to be very compact as well as low energy. A ring oscillator based temperature sensor is presented in TSMCs 65nm node, with an area of 1850μm<sup>2</sup>. This sensor has a novel structure which is similar to a bandgap reference, with the BJT devices replaced by scaled ring oscillators. The sensor exhibits a 3-sigma inaccuracy of ±1°C near the throttle point, for hot-spot sensing, and ± 2.5°C over the -10°C to 110°C range. The power supply rejection is 2.4°C/V. The sensor consumes 0.94nJ per 10μs conversion and achieves a resolution FOM of 96pJ-K<sup>2</sup>.https://ieeexplore.ieee.org/document/9093007/Low powerring oscillatorssub-threshold designMOS temperature sensors |
| spellingShingle | Natan Vinshtok-Melnik Joseph Shor Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor IEEE Access Low power ring oscillators sub-threshold design MOS temperature sensors |
| title | Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor |
| title_full | Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor |
| title_fullStr | Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor |
| title_full_unstemmed | Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor |
| title_short | Ultra Miniature 1850 <italic>μm</italic><sup>2</sup> Ring Oscillator Based Temperature Sensor |
| title_sort | ultra miniature 1850 italic x03bc m italic sup 2 sup ring oscillator based temperature sensor |
| topic | Low power ring oscillators sub-threshold design MOS temperature sensors |
| url | https://ieeexplore.ieee.org/document/9093007/ |
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