Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications
Thermophotovoltaic conversion using heat to generate electricity in photovoltaic cells based on the detraction of thermal radiation suffers from many engineering challenges. The focus of this paper is to study the nanostructure of AlGaAsSb for thermophotovoltaic energy conversion using lattice-match...
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MDPI AG
2022-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/19/3486 |
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| author | Djamel Bensenouci Boualem Merabet Osman M. Ozkendir Md A. Maleque |
| author_facet | Djamel Bensenouci Boualem Merabet Osman M. Ozkendir Md A. Maleque |
| author_sort | Djamel Bensenouci |
| collection | DOAJ |
| description | Thermophotovoltaic conversion using heat to generate electricity in photovoltaic cells based on the detraction of thermal radiation suffers from many engineering challenges. The focus of this paper is to study the nanostructure of AlGaAsSb for thermophotovoltaic energy conversion using lattice-matched heterostructures of GaSb-based materials in order to overcome the current challenges. The XAFS spectroscopy technique was used to analyze electronic structures and optical properties of GaSb, (Al, In) GaSbAs. The XAFS spectroscopy analysis showed a powerful decay at peak intensity that reveals to be related to a loss in Sb amount and light As atoms replaced in Sb atoms by 25%. Moreover, it was found that Al/In doped samples have highly symmetric data features (same atomic species substitution). The narrow direct bandgap energy, E<sub>g</sub> of Al<sub>0.125</sub>Ga<sub>0.875</sub>Sb<sub>0.75</sub>As<sub>0.25</sub> material raised (0.4–0.6 eV) compared to conventional photovoltaic cell bandgap energy (which is generally less than 0.4 eV) with weak absorption coefficients. The thermoelectric properties of AlGaAsSb computed via Botlztrap code showed that the electrons made up the majority of the charge carriers in AlGaAsSb. This nanostructure material exhibited a higher and acceptable figure of merit and demonstrated a promising thermoelectric material for solar thermophotovoltaic applications. |
| first_indexed | 2024-03-09T21:20:56Z |
| format | Article |
| id | doaj.art-8e2fabd1177c453eb731a8761b28584c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:20:56Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-8e2fabd1177c453eb731a8761b28584c2023-11-23T21:20:52ZengMDPI AGNanomaterials2079-49912022-10-011219348610.3390/nano12193486Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells ApplicationsDjamel Bensenouci0Boualem Merabet1Osman M. Ozkendir2Md A. Maleque3Faculty of Sciences and Technology, Mustapha Stambouli University, Mascara 29000, AlgeriaFaculty of Sciences and Technology, Mustapha Stambouli University, Mascara 29000, AlgeriaDepartment of Natural and Mathematical Sciences, Faculty of Engineering, Tarsus University, Tarsus 33400, TurkeyFaculty of Engineering, International Islamic University of Malaysia (IIUM), Jalan Gombak 53100, MalaysiaThermophotovoltaic conversion using heat to generate electricity in photovoltaic cells based on the detraction of thermal radiation suffers from many engineering challenges. The focus of this paper is to study the nanostructure of AlGaAsSb for thermophotovoltaic energy conversion using lattice-matched heterostructures of GaSb-based materials in order to overcome the current challenges. The XAFS spectroscopy technique was used to analyze electronic structures and optical properties of GaSb, (Al, In) GaSbAs. The XAFS spectroscopy analysis showed a powerful decay at peak intensity that reveals to be related to a loss in Sb amount and light As atoms replaced in Sb atoms by 25%. Moreover, it was found that Al/In doped samples have highly symmetric data features (same atomic species substitution). The narrow direct bandgap energy, E<sub>g</sub> of Al<sub>0.125</sub>Ga<sub>0.875</sub>Sb<sub>0.75</sub>As<sub>0.25</sub> material raised (0.4–0.6 eV) compared to conventional photovoltaic cell bandgap energy (which is generally less than 0.4 eV) with weak absorption coefficients. The thermoelectric properties of AlGaAsSb computed via Botlztrap code showed that the electrons made up the majority of the charge carriers in AlGaAsSb. This nanostructure material exhibited a higher and acceptable figure of merit and demonstrated a promising thermoelectric material for solar thermophotovoltaic applications.https://www.mdpi.com/2079-4991/12/19/3486thermophotovoltaicsnanostructured materialsAlGaAsSbXAFS spectroscopyDFTBotlztrap |
| spellingShingle | Djamel Bensenouci Boualem Merabet Osman M. Ozkendir Md A. Maleque Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications Nanomaterials thermophotovoltaics nanostructured materials AlGaAsSb XAFS spectroscopy DFT Botlztrap |
| title | Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications |
| title_full | Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications |
| title_fullStr | Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications |
| title_full_unstemmed | Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications |
| title_short | Nanostructured AlGaAsSb Materials for Thermophotovoltaic Solar Cells Applications |
| title_sort | nanostructured algaassb materials for thermophotovoltaic solar cells applications |
| topic | thermophotovoltaics nanostructured materials AlGaAsSb XAFS spectroscopy DFT Botlztrap |
| url | https://www.mdpi.com/2079-4991/12/19/3486 |
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