Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4

We study the Fano interference from different phase transitions of Eu ^3+ :YPO _4 and Pr ^3+ :YPO _4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO _4 crystals. The Fano interfering bright and d...

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Main Authors: Huanrong Fan, Faizan Raza, Irfan Ahmed, Kangkang Li, Habib Ullah, Yanpeng Zhang
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/abaacc
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author Huanrong Fan
Faizan Raza
Irfan Ahmed
Kangkang Li
Habib Ullah
Yanpeng Zhang
author_facet Huanrong Fan
Faizan Raza
Irfan Ahmed
Kangkang Li
Habib Ullah
Yanpeng Zhang
author_sort Huanrong Fan
collection DOAJ
description We study the Fano interference from different phase transitions of Eu ^3+ :YPO _4 and Pr ^3+ :YPO _4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO _4 crystals. The Fano interfering bright and dark states are classified based on dressed spontaneous parametric four-wave mixing, dressed multi-order fluorescence, and hybrid signal regimes. Further, the Fano interference between conti-nuous and discrete states can be controlled from partly-(constructive–destructive)-interference through a phase transition, nonlinear phase, and dressing. The (H + T)-phase Pr ^3+ :YPO _4 suggests more obvious Fano interference in contrast to T- or H-phase Pr ^3+ :YPO _4 . We report that the Pr ^3+ :YPO _4 and Eu ^3+ :YPO _4 demonstrates the dressed multi-level- and dressed single-level Fano interference, respectively, with further three types of Fano interference that can be distinguished at different time delays. The experimental measurement agrees with theoretical simulations. Such results may be used for the design of new types of quantum electronic or spintronic devices such as Fano-transistors.
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spelling doaj.art-8e397b8220c045feb915945e9cad48252023-08-08T15:26:35ZengIOP PublishingNew Journal of Physics1367-26302020-01-0122909300810.1088/1367-2630/abaaccThree-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4Huanrong Fan0Faizan Raza1Irfan Ahmed2Kangkang Li3Habib Ullah4Yanpeng Zhang5https://orcid.org/0000-0002-0954-7681Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University , Xi’an 710049, People’s Republic of ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University , Xi’an 710049, People’s Republic of ChinaDepartment of Physics, City University of Hong Kong , Kowloon, Hong Kong SAR, People’s Republic of ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University , Xi’an 710049, People’s Republic of ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University , Xi’an 710049, People’s Republic of ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University , Xi’an 710049, People’s Republic of ChinaWe study the Fano interference from different phase transitions of Eu ^3+ :YPO _4 and Pr ^3+ :YPO _4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO _4 crystals. The Fano interfering bright and dark states are classified based on dressed spontaneous parametric four-wave mixing, dressed multi-order fluorescence, and hybrid signal regimes. Further, the Fano interference between conti-nuous and discrete states can be controlled from partly-(constructive–destructive)-interference through a phase transition, nonlinear phase, and dressing. The (H + T)-phase Pr ^3+ :YPO _4 suggests more obvious Fano interference in contrast to T- or H-phase Pr ^3+ :YPO _4 . We report that the Pr ^3+ :YPO _4 and Eu ^3+ :YPO _4 demonstrates the dressed multi-level- and dressed single-level Fano interference, respectively, with further three types of Fano interference that can be distinguished at different time delays. The experimental measurement agrees with theoretical simulations. Such results may be used for the design of new types of quantum electronic or spintronic devices such as Fano-transistors.https://doi.org/10.1088/1367-2630/abaaccdressed spontaneous parametric four-wave mixing Fanodressed multi-order fluorescence Fanohybrid Fano interferencephase transition
spellingShingle Huanrong Fan
Faizan Raza
Irfan Ahmed
Kangkang Li
Habib Ullah
Yanpeng Zhang
Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
New Journal of Physics
dressed spontaneous parametric four-wave mixing Fano
dressed multi-order fluorescence Fano
hybrid Fano interference
phase transition
title Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
title_full Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
title_fullStr Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
title_full_unstemmed Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
title_short Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4
title_sort three type fano interference controlled by the phase transition of eu3 pr3 ypo4
topic dressed spontaneous parametric four-wave mixing Fano
dressed multi-order fluorescence Fano
hybrid Fano interference
phase transition
url https://doi.org/10.1088/1367-2630/abaacc
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