A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure
This paper proposes a complementary metal–oxide–semiconductor (CMOS) amplifier using low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The Corbino structure used in the proposed amplifier has a higher output resistance than conventional amplifiers. The proposed circuit is composed o...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2022-10-01
|
| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2022.2102681 |
| _version_ | 1811179858037833728 |
|---|---|
| author | Dong-Hwan Jeon Won-Been Jeong Jeong-Soo Park Hoon-Ju Chung Seung-Woo Lee |
| author_facet | Dong-Hwan Jeon Won-Been Jeong Jeong-Soo Park Hoon-Ju Chung Seung-Woo Lee |
| author_sort | Dong-Hwan Jeon |
| collection | DOAJ |
| description | This paper proposes a complementary metal–oxide–semiconductor (CMOS) amplifier using low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The Corbino structure used in the proposed amplifier has a higher output resistance than conventional amplifiers. The proposed circuit is composed of two CMOS inverters, one CMOS switch, and one input capacitor. It was possible to determine the operating point where the voltage gain could be kept high, regardless of the device variation, by shorting the gate input and output of the first amplifier. The alternating current component of the input signal was increased because the input signal was transferred to the first amplifier via the capacitor. The function of the second amplifier was to increase the total voltage gain. When a peak-to-peak voltage sine wave of 2 mV was applied at a frequency lower than 500 Hz, the proposed circuit showed an average voltage gain of 60.6 dB, which is the highest among the previously published TFT amplifiers. |
| first_indexed | 2024-04-11T06:41:36Z |
| format | Article |
| id | doaj.art-8eb4ef3e474140da9fbb6189539c5171 |
| institution | Directory Open Access Journal |
| issn | 1598-0316 2158-1606 |
| language | English |
| last_indexed | 2024-04-11T06:41:36Z |
| publishDate | 2022-10-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Information Display |
| spelling | doaj.art-8eb4ef3e474140da9fbb6189539c51712022-12-22T04:39:31ZengTaylor & Francis GroupJournal of Information Display1598-03162158-16062022-10-0123428128610.1080/15980316.2022.2102681A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structureDong-Hwan Jeon0Won-Been Jeong1Jeong-Soo Park2Hoon-Ju Chung3Seung-Woo Lee4Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-gu, KoreaDepartment of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-gu, KoreaDepartment of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-gu, KoreaSchool of Electronic Engineering, Kumoh National Institute of Technology, Gumi, KoreaDepartment of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-gu, KoreaThis paper proposes a complementary metal–oxide–semiconductor (CMOS) amplifier using low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The Corbino structure used in the proposed amplifier has a higher output resistance than conventional amplifiers. The proposed circuit is composed of two CMOS inverters, one CMOS switch, and one input capacitor. It was possible to determine the operating point where the voltage gain could be kept high, regardless of the device variation, by shorting the gate input and output of the first amplifier. The alternating current component of the input signal was increased because the input signal was transferred to the first amplifier via the capacitor. The function of the second amplifier was to increase the total voltage gain. When a peak-to-peak voltage sine wave of 2 mV was applied at a frequency lower than 500 Hz, the proposed circuit showed an average voltage gain of 60.6 dB, which is the highest among the previously published TFT amplifiers.https://www.tandfonline.com/doi/10.1080/15980316.2022.2102681Low-temperature poly-si oxide thin-film transistorstwo-stage amplifierCorbino inverter |
| spellingShingle | Dong-Hwan Jeon Won-Been Jeong Jeong-Soo Park Hoon-Ju Chung Seung-Woo Lee A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure Journal of Information Display Low-temperature poly-si oxide thin-film transistors two-stage amplifier Corbino inverter |
| title | A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure |
| title_full | A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure |
| title_fullStr | A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure |
| title_full_unstemmed | A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure |
| title_short | A high-gain two-stage amplifier using low-temperature poly-si oxide thin-film transistors with a Corbino structure |
| title_sort | high gain two stage amplifier using low temperature poly si oxide thin film transistors with a corbino structure |
| topic | Low-temperature poly-si oxide thin-film transistors two-stage amplifier Corbino inverter |
| url | https://www.tandfonline.com/doi/10.1080/15980316.2022.2102681 |
| work_keys_str_mv | AT donghwanjeon ahighgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT wonbeenjeong ahighgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT jeongsoopark ahighgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT hoonjuchung ahighgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT seungwoolee ahighgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT donghwanjeon highgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT wonbeenjeong highgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT jeongsoopark highgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT hoonjuchung highgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure AT seungwoolee highgaintwostageamplifierusinglowtemperaturepolysioxidethinfilmtransistorswithacorbinostructure |