Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor
This work presents the investigation, at room temperature, of Zn2TiO4samples containing Ni2+ ions as substitutional impurities. Samples with molecular formula Zn2(1-x)Ni2xTiO4, where x = 0.00, 0.0007, 0.001, 0.0013, 0.002 and 0.003, in which Zn2+ ions were replaced by Ni2+ ions, were prepared throug...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2020-07-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300214&tlng=en |
| _version_ | 1798020479981715456 |
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| author | L. P. V. Gomes S. S. Pedro A. López A. R. Camara N. Cella L. P. Sosman |
| author_facet | L. P. V. Gomes S. S. Pedro A. López A. R. Camara N. Cella L. P. Sosman |
| author_sort | L. P. V. Gomes |
| collection | DOAJ |
| description | This work presents the investigation, at room temperature, of Zn2TiO4samples containing Ni2+ ions as substitutional impurities. Samples with molecular formula Zn2(1-x)Ni2xTiO4, where x = 0.00, 0.0007, 0.001, 0.0013, 0.002 and 0.003, in which Zn2+ ions were replaced by Ni2+ ions, were prepared through solid-state method, crystalline data were obtained by X-ray diffraction, the elemental composition was determined by X-ray fluorescence and the optical properties were investigated through photoluminescence and photoacoustic techniques. The photoluminescence spectra showed broadbands from 640 nm to 800 nm. The emission of the Zn2(1-x)Ni2xTiO4 samples was assigned to the overlapping of the Ni2+and the Zn2TiO4 emission. The most intense photoluminescence signal was obtained with excitation radiation at a wavelength of 360 nm for the sample with x = 0.001. The photoacoustic spectra showed absorption bands characteristic of semiconductor materials due to the host Zn2TiO4. The energy bandgap of the Zn2(1-x)Ni2xTiO4was obtained from photoacoustic absorption spectra. |
| first_indexed | 2024-04-11T16:58:10Z |
| format | Article |
| id | doaj.art-8ed16fd6274b4479b046271a89dac595 |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-04-11T16:58:10Z |
| publishDate | 2020-07-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-8ed16fd6274b4479b046271a89dac5952022-12-22T04:13:13ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392020-07-0123310.1590/1980-5373-mr-2020-0061Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ SemiconductorL. P. V. GomesS. S. PedroA. LópezA. R. CamaraN. CellaL. P. Sosmanhttps://orcid.org/0000-0003-0145-2714This work presents the investigation, at room temperature, of Zn2TiO4samples containing Ni2+ ions as substitutional impurities. Samples with molecular formula Zn2(1-x)Ni2xTiO4, where x = 0.00, 0.0007, 0.001, 0.0013, 0.002 and 0.003, in which Zn2+ ions were replaced by Ni2+ ions, were prepared through solid-state method, crystalline data were obtained by X-ray diffraction, the elemental composition was determined by X-ray fluorescence and the optical properties were investigated through photoluminescence and photoacoustic techniques. The photoluminescence spectra showed broadbands from 640 nm to 800 nm. The emission of the Zn2(1-x)Ni2xTiO4 samples was assigned to the overlapping of the Ni2+and the Zn2TiO4 emission. The most intense photoluminescence signal was obtained with excitation radiation at a wavelength of 360 nm for the sample with x = 0.001. The photoacoustic spectra showed absorption bands characteristic of semiconductor materials due to the host Zn2TiO4. The energy bandgap of the Zn2(1-x)Ni2xTiO4was obtained from photoacoustic absorption spectra.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300214&tlng=enPhotoluminescence, photoacousticNi2+semiconductor material |
| spellingShingle | L. P. V. Gomes S. S. Pedro A. López A. R. Camara N. Cella L. P. Sosman Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor Materials Research Photoluminescence, photoacoustic Ni2+ semiconductor material |
| title | Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor |
| title_full | Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor |
| title_fullStr | Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor |
| title_full_unstemmed | Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor |
| title_short | Photoluminescence, Photoacoustic and Structural Characteristics of Polycrystalline Zn2TiO4: Ni2+ Semiconductor |
| title_sort | photoluminescence photoacoustic and structural characteristics of polycrystalline zn2tio4 ni2 semiconductor |
| topic | Photoluminescence, photoacoustic Ni2+ semiconductor material |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300214&tlng=en |
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