Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm<sup>2</sup> at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm<sup>2</sup>...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9359663/ |
| _version_ | 1819120605830578176 |
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| author | Andrew M. Armstrong Andrew A. Allerman Greg W. Pickrell Mary H. Crawford Caleb E. Glaser Trevor Smith |
| author_facet | Andrew M. Armstrong Andrew A. Allerman Greg W. Pickrell Mary H. Crawford Caleb E. Glaser Trevor Smith |
| author_sort | Andrew M. Armstrong |
| collection | DOAJ |
| description | Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm<sup>2</sup> at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm<sup>2</sup>) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial n-GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to p-GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation. |
| first_indexed | 2024-12-22T06:23:20Z |
| format | Article |
| id | doaj.art-8ef17d39cb45411983348f962825013f |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T06:23:20Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8ef17d39cb45411983348f962825013f2022-12-21T18:35:55ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01931832310.1109/JEDS.2021.30610289359663Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking VoltageAndrew M. Armstrong0https://orcid.org/0000-0003-0391-6009Andrew A. Allerman1Greg W. Pickrell2https://orcid.org/0000-0003-0337-7236Mary H. Crawford3Caleb E. Glaser4Trevor Smith5Semiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USASemiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USASemiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USASemiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USASemiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USASemiconductor Material and Device Sciences and Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, NM, USAEtched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm<sup>2</sup> at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm<sup>2</sup>) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial n-GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to p-GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation.https://ieeexplore.ieee.org/document/9359663/Gallium nitridep-n junctionspower semiconductor devicesepitaxial growth |
| spellingShingle | Andrew M. Armstrong Andrew A. Allerman Greg W. Pickrell Mary H. Crawford Caleb E. Glaser Trevor Smith Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage IEEE Journal of the Electron Devices Society Gallium nitride p-n junctions power semiconductor devices epitaxial growth |
| title | Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage |
| title_full | Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage |
| title_fullStr | Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage |
| title_full_unstemmed | Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage |
| title_short | Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage |
| title_sort | etched and regrown gan italic pn italic diodes with 1600 v blocking voltage |
| topic | Gallium nitride p-n junctions power semiconductor devices epitaxial growth |
| url | https://ieeexplore.ieee.org/document/9359663/ |
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