Light emission from silicon with tin-containing nanocrystals
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4926596 |
| _version_ | 1817996825449201664 |
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| author | Søren Roesgaard Jacques Chevallier Peter I. Gaiduk John Lundsgaard Hansen Pia Bomholt Jensen Arne Nylandsted Larsen Axel Svane Peter Balling Brian Julsgaard |
| author_facet | Søren Roesgaard Jacques Chevallier Peter I. Gaiduk John Lundsgaard Hansen Pia Bomholt Jensen Arne Nylandsted Larsen Axel Svane Peter Balling Brian Julsgaard |
| author_sort | Søren Roesgaard |
| collection | DOAJ |
| description | Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. |
| first_indexed | 2024-04-14T02:29:00Z |
| format | Article |
| id | doaj.art-8f1de2ba40134b019ceabfd066790842 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-14T02:29:00Z |
| publishDate | 2015-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8f1de2ba40134b019ceabfd0667908422022-12-22T02:17:46ZengAIP Publishing LLCAIP Advances2158-32262015-07-0157077114077114-610.1063/1.4926596015507ADVLight emission from silicon with tin-containing nanocrystalsSøren Roesgaard0Jacques Chevallier1Peter I. Gaiduk2John Lundsgaard Hansen3Pia Bomholt Jensen4Arne Nylandsted Larsen5Axel Svane6Peter Balling7Brian Julsgaard8Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkBelarussian State University, Praspyekt Nyezalyezhnastsi 4, 220030 Minsk, BelarusInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkDepartment of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, DenmarkInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkTin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.http://dx.doi.org/10.1063/1.4926596 |
| spellingShingle | Søren Roesgaard Jacques Chevallier Peter I. Gaiduk John Lundsgaard Hansen Pia Bomholt Jensen Arne Nylandsted Larsen Axel Svane Peter Balling Brian Julsgaard Light emission from silicon with tin-containing nanocrystals AIP Advances |
| title | Light emission from silicon with tin-containing nanocrystals |
| title_full | Light emission from silicon with tin-containing nanocrystals |
| title_fullStr | Light emission from silicon with tin-containing nanocrystals |
| title_full_unstemmed | Light emission from silicon with tin-containing nanocrystals |
| title_short | Light emission from silicon with tin-containing nanocrystals |
| title_sort | light emission from silicon with tin containing nanocrystals |
| url | http://dx.doi.org/10.1063/1.4926596 |
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