Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector
This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-01-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/3/1264 |
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| author | Joaquín Hernández-Betanzos Mariano Aceves-Mijares Alfredo Abelardo González-Fernández |
| author_facet | Joaquín Hernández-Betanzos Mariano Aceves-Mijares Alfredo Abelardo González-Fernández |
| author_sort | Joaquín Hernández-Betanzos |
| collection | DOAJ |
| description | This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications. |
| first_indexed | 2024-03-10T00:14:10Z |
| format | Article |
| id | doaj.art-8f22b87173764d20817e85728b66f75b |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T00:14:10Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-8f22b87173764d20817e85728b66f75b2023-11-23T15:54:42ZengMDPI AGApplied Sciences2076-34172022-01-01123126410.3390/app12031264Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor PhotodetectorJoaquín Hernández-Betanzos0Mariano Aceves-Mijares1Alfredo Abelardo González-Fernández2Electronics Department, National Institute for Astrophysics, Optics and Electronics (INAOE), P.O. Box 51, Puebla 72000, MexicoElectronics Department, National Institute for Astrophysics, Optics and Electronics (INAOE), P.O. Box 51, Puebla 72000, MexicoElectronics Department, National Institute for Astrophysics, Optics and Electronics (INAOE), P.O. Box 51, Puebla 72000, MexicoThis work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications.https://www.mdpi.com/2076-3417/12/3/1264photodetectorsdetectorssiliconintegrated optoelectronics |
| spellingShingle | Joaquín Hernández-Betanzos Mariano Aceves-Mijares Alfredo Abelardo González-Fernández Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector Applied Sciences photodetectors detectors silicon integrated optoelectronics |
| title | Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector |
| title_full | Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector |
| title_fullStr | Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector |
| title_full_unstemmed | Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector |
| title_short | Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector |
| title_sort | understanding the light detection in an integrated novel electrophotonic wavesensor photodetector |
| topic | photodetectors detectors silicon integrated optoelectronics |
| url | https://www.mdpi.com/2076-3417/12/3/1264 |
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