Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3}
We present an analysis of the potential thermoelectric performance of hole-doped Bi_{2}Se_{3}, which is commonly considered to show inferior room temperature performance when compared to Bi_{2}Te_{3}. We find that if the lattice thermal conductivity can be reduced by nanostructuring techniques (as h...
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| Format: | Article |
| Language: | English |
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American Physical Society
2011-10-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.1.021005 |
| _version_ | 1830411100652306432 |
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| author | David Parker David J. Singh |
| author_facet | David Parker David J. Singh |
| author_sort | David Parker |
| collection | DOAJ |
| description | We present an analysis of the potential thermoelectric performance of hole-doped Bi_{2}Se_{3}, which is commonly considered to show inferior room temperature performance when compared to Bi_{2}Te_{3}. We find that if the lattice thermal conductivity can be reduced by nanostructuring techniques (as have been applied to Bi_{2}Te_{3} in Refs. [W. Xie, X. Tang, Y. Yan, Q. Zhang, and T. M. Tritt, Unique Nanostructures and Enhanced Thermoelectric Performance of Melt-Spun BiSbTe Alloys, Appl. Phys. Lett. 94, 102111 (2009); APPLAB0003-695110.1063/1.3097026B. Poudel et al., High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys, Science 320, 634 (2008).SCIEAS0036-807510.1126/science.1156446]) the material may show optimized ZT values of unity or more in the 300–500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi_{2}Se_{3}. |
| first_indexed | 2024-12-20T19:42:31Z |
| format | Article |
| id | doaj.art-8f571a36b5d5479c999c2f7e58ec09ed |
| institution | Directory Open Access Journal |
| issn | 2160-3308 |
| language | English |
| last_indexed | 2024-12-20T19:42:31Z |
| publishDate | 2011-10-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj.art-8f571a36b5d5479c999c2f7e58ec09ed2022-12-21T19:28:29ZengAmerican Physical SocietyPhysical Review X2160-33082011-10-011202100510.1103/PhysRevX.1.021005Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3}David ParkerDavid J. SinghWe present an analysis of the potential thermoelectric performance of hole-doped Bi_{2}Se_{3}, which is commonly considered to show inferior room temperature performance when compared to Bi_{2}Te_{3}. We find that if the lattice thermal conductivity can be reduced by nanostructuring techniques (as have been applied to Bi_{2}Te_{3} in Refs. [W. Xie, X. Tang, Y. Yan, Q. Zhang, and T. M. Tritt, Unique Nanostructures and Enhanced Thermoelectric Performance of Melt-Spun BiSbTe Alloys, Appl. Phys. Lett. 94, 102111 (2009); APPLAB0003-695110.1063/1.3097026B. Poudel et al., High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys, Science 320, 634 (2008).SCIEAS0036-807510.1126/science.1156446]) the material may show optimized ZT values of unity or more in the 300–500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi_{2}Se_{3}.http://doi.org/10.1103/PhysRevX.1.021005 |
| spellingShingle | David Parker David J. Singh Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} Physical Review X |
| title | Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} |
| title_full | Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} |
| title_fullStr | Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} |
| title_full_unstemmed | Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} |
| title_short | Potential Thermoelectric Performance from Optimization of Hole-Doped Bi_{2}Se_{3} |
| title_sort | potential thermoelectric performance from optimization of hole doped bi 2 se 3 |
| url | http://doi.org/10.1103/PhysRevX.1.021005 |
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