Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET
The severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. In this article, a series capacitance gate driver (SCGD) is proposed to solve this problem. The series capacitance is charged or discharged in switching transient so that the equivalent driving...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10381516/ |
| _version_ | 1797268025637863424 |
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| author | Sheng Dou Liansheng Huang Peng Fu Xiaojiao Chen Xiuqing Zhang Shiying He Zejing Wang Jian Yang |
| author_facet | Sheng Dou Liansheng Huang Peng Fu Xiaojiao Chen Xiuqing Zhang Shiying He Zejing Wang Jian Yang |
| author_sort | Sheng Dou |
| collection | DOAJ |
| description | The severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. In this article, a series capacitance gate driver (SCGD) is proposed to solve this problem. The series capacitance is charged or discharged in switching transient so that the equivalent driving resistance is gradually increased compared with that of conventional gate driver (CGD), and the voltage oscillation is suppressed. Under the same voltage oscillation level, the average equivalent driving resistance of SCGD is smaller than that of CGD through reasonable parameters design. This means that the optimization of both voltage oscillation and switching loss is realized. Although active gate driver (AGD) has good performance in this respect, the effect may be affected by the delay and control accuracy due to very short switching transient time of SiC MOSFET. Compared with AGD, the proposed SCGD only adds passive components without any control and has a simple structure. The experimental results verify the effectiveness of SCGD. |
| first_indexed | 2024-03-07T14:33:06Z |
| format | Article |
| id | doaj.art-8f5dbc38a684480e993c0ac4108e5282 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-25T01:25:55Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8f5dbc38a684480e993c0ac4108e52822024-03-09T00:00:09ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011217618610.1109/JEDS.2024.334968410381516Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFETSheng Dou0https://orcid.org/0000-0001-6816-5635Liansheng Huang1https://orcid.org/0000-0001-9616-3565Peng Fu2Xiaojiao Chen3https://orcid.org/0000-0001-9616-3565Xiuqing Zhang4https://orcid.org/0000-0002-3416-501XShiying He5https://orcid.org/0000-0002-4785-7656Zejing Wang6https://orcid.org/0000-0002-7505-4025Jian Yang7University of Science and Technology of China, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaInstitute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, ChinaCentral South University, Changsha, ChinaThe severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. In this article, a series capacitance gate driver (SCGD) is proposed to solve this problem. The series capacitance is charged or discharged in switching transient so that the equivalent driving resistance is gradually increased compared with that of conventional gate driver (CGD), and the voltage oscillation is suppressed. Under the same voltage oscillation level, the average equivalent driving resistance of SCGD is smaller than that of CGD through reasonable parameters design. This means that the optimization of both voltage oscillation and switching loss is realized. Although active gate driver (AGD) has good performance in this respect, the effect may be affected by the delay and control accuracy due to very short switching transient time of SiC MOSFET. Compared with AGD, the proposed SCGD only adds passive components without any control and has a simple structure. The experimental results verify the effectiveness of SCGD.https://ieeexplore.ieee.org/document/10381516/voltage oscillationsafety and EMIswitching loss |
| spellingShingle | Sheng Dou Liansheng Huang Peng Fu Xiaojiao Chen Xiuqing Zhang Shiying He Zejing Wang Jian Yang Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET IEEE Journal of the Electron Devices Society voltage oscillation safety and EMI switching loss |
| title | Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET |
| title_full | Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET |
| title_fullStr | Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET |
| title_full_unstemmed | Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET |
| title_short | Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET |
| title_sort | series capacitance gate driver to suppress voltage oscillation of sic mosfet |
| topic | voltage oscillation safety and EMI switching loss |
| url | https://ieeexplore.ieee.org/document/10381516/ |
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